News: Microelectronics
25 August 2025
Innoscience launches new SolidGaN devices, boosting power efficiency by 50%
InnoScience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride on silicon (GaN) power chips on 8” silicon wafers — has launched four new 700V SolidGaN devices (ISG6123TA, ISG6123TP, ISG6124TA, and ISG6124TP) that adopt industry-standard TOLL and TOLTP high-power packages, offering compatibility with both traditional controllers and motor driver applications, and streamlining design and simplifying adoption across various applications.
As power demands continue to surge, power systems are evolving rapidly, with server supplies scaling up from 2kW to 6kW, PV inverters pushing for 99% efficiency, and on-board chargers (OBC) now targeting over 3.3kW/L in power density. For engineers, this translates into increased system complexity, challenging thermal management, and reliability concerns. The ISG612x SolidGaN series addressed these challenges with high-frequency switching, superior power density, and robust thermal performance, enabling compact, reliable and high-efficiency GaN-based power systems, says InnoScience.
Building a ‘seamless replacement’GaN ecosystem
Innoscience notes that 10–24V wide gate drive compatibility supports SiC/IGBT controllers with ease.
Also, due to a pin-to-pin compatible design, TP and TA package versions share functionally identical pinouts for effortless migration.
In addition, an integrated LDO and gate clamp mitigates Vgs surge risks and eliminates the need for external gate clamp circuitry.
Performance breakthrough
Regarding dV/dt robustness, the ability to withstand up to 100V/ns, plus a 0.5Ω Miller clamp for robust gate stability, removes the need for additional clamping circuitry.
With zero reverse recovery (Qrr=0), switching losses are reduced by up to 40%.
Thermal resistance is an exceptional 0.480.48℃/W for the TOLT package (ISG6124TP) and 0.46℃/W for the TOLL package (ISG6123TA).
Application advantage upgrade
The new devices are suitable for 1–6kW high-power applications including server power supplies, HVAC systems, and industrial power systems.
Also, ccompared with traditional silicon solutions, efficiency is improved by 1–2% and power density is increased by up to 50%.
SolidGaN versus traditional solutions
In competitive benchmarking, InnoScience lists the following features:
- 3x the switching frequency, enables up to 2MHz operation for SolidGaN, versus 650kHz for comparable silicon carbide (SiC) devices;
- 50% increase in power density (based on test data);
- up to 60% size reduction, due to simplified driver and protection circuitry integration.
The ISG612X family now includes eight models, offering broad flexibility in packaging, simplified design, and performance, says Innoscience.
Innoscience and Midea partner to accelerate GaN adoption in home appliance industry
