News: Microelectronics
19 December 2025
onsemi to develop power devices using GlobalFoundries’ 200mm lateral GaN-on-Si
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has signed a collaboration agreement with GlobalFoundries of Malta, NY (GF, the only US-based pure-play foundry with a global manufacturing footprint, including facilities in the USA, Europe and Singapore) to develop and manufacture gallium nitride (GaN) power products using GF’s 200mm eMode GaN-on-silicon process for critical markets, starting with 650V.
The collaboration accelerates onsemi’s roadmap for high-performance GaN devices and integrated power stages, expanding its portfolio with high-voltage products to meet the growing power demands of AI data centers, electric vehicles (EV), renewable energy, industrial systems, and aerospace, defense and security.
“This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650V power devices for high-growth markets. Paired with our silicon drivers and controllers, these GaN products will enable customers to innovate and build smaller, more efficient power systems for AI data centers, EVs, space applications, and beyond,” says Dinesh Ramanathan, senior VP of corporate strategy, onsemi. “We are on track to begin providing samples to customers in first-half 2026, and scale rapidly to volume production,” he adds.
“By combining our 200mm GaN-on-Si platform and US-based manufacturing with onsemi’s deep system and product expertise, we’re accelerating high-efficiency solutions and building resilient supply chains for data centers, automotive, industrial, aerospace & defense, and other critical markets,” says GlobalFoundries’ chief business officer Mike Hogan. “With onsemi as a key partner, we will continue to advance GaN semiconductors that meet the evolving demands of AI, electrification, and sustainable energy.”
onsemi will pair its silicon drivers, controllers and thermally enhanced packages with GF’s 650V GaN technology platform to deliver optimized GaN devices with higher power density and efficiency. These include power supplies and DC–DC converters for AI data centers, onboard chargers and DC–DC converters for electric vehicles, solar microinverters and energy storage systems, motor drives and DC–DC converters, for industrial and aerospace, defense, and security applications.
This effort expands onsemi’s power semiconductor portfolio, which now includes the full spectrum of GaN technologies – from low-, medium- and high-voltage lateral GaN to ultra high-voltage vertical GaN – enabling system designers to build next-generation power architectures that deliver more power in smaller footprints. These GaN advantages include:
- Higher-frequency operation – By operating at higher switching frequencies, GaN allows designers to reduce component count, system size and cost while improving efficiency and thermal performance.
- Bidirectional capability – Bidirectional GaN capabilities enable entirely new topologies that can replace up to four traditional unidirectional transistors, cutting costs and simplifying designs.
- Integrated functionality – Combining GaN FETs with drivers, controllers, isolation and protection in a single package allows for faster design cycles and lower electromagnetic interference. The thermally enhanced packages and optimized gate drivers push performance and reliability even at high switching speeds.
onsemi and Innoscience sign MoU to collaborate on speeding global rollout of GaN power portfolio
GlobalFoundries and Navitas partner on US GaN technology and manufacturing
onsemi unveils vertical GaN power semiconductors, based on proprietary GaN-on-GaN technology
