AES Semigas


23 January 2024

SemiQ debuting QSiC 1200V MOSFET modules at APEC

In booth #2245 at the Applied Power Electronics Conference (APEC 2024) in Long Beach, CA (25–29 February), SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-frequency, high-temperature and high-efficiency power semiconductor devices — is debuting new portfolio of QSiC 1200V MOSFET modules, which are designed to operate reliably in challenging conditions and enable high-performance, high-density implementation while minimizing both dynamic and static losses. Crafted from high-performance ceramics, the modules are available in SOT-227, half-bridge and full-bridge options.

The new QSiC MOSFET modules support a variety of automotive and industrial power applications where efficiency, power density and performance are critical design criteria. These include electric vehicle (EV) charging, on-board chargers (OBCs), DC–DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data-center power supplies and UPS/PFC circuits.

“Our power modules stand out not just for their high performance, but also for the rigorous testing that ensures reliability,” says president Dr Timothy Han. “All modules have undergone testing exceeding 1350V. From gate burn-in testing to stress tests like HTRB and H3TRB, we prioritize stability and quality.”

See related items:

SemiQ adds 5mΩ, 10mΩ and 20mΩ variants in half-bridge packages to QSiC range of 1200V MOSFET power modules

SemiQ launches 1200V 40mΩ SiC MOSFET

Tags: SiC power MOSFET


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