AES Semigas


15 December 2023

SemiQ adds 5mΩ, 10mΩ and 20mΩ variants in half-bridge packages to QSiC range of 1200V MOSFET power modules

SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-frequency, high-temperature and high-efficiency power semiconductor devices — has expanded its QSiC power module portfolio with the introduction of a new series of 5mΩ, 10mΩ and 20mΩ 1200V silicon carbide power MOSFETs in industry-standard half-bridge packages.

Engineered and tested to operate reliably in demanding environments, the new compact, high-performance modules enable high-power-density implementations while minimizing dynamic and static losses. Featuring high breakdown voltage (>1400V), the new QSiC modules support high-temperature operation (Tj=175°C) with low Rds(On) shift over the full temperature range. In addition, the modules exhibit what is claimed to be industry-leading gate oxide stability and long gate oxide lifetime, avalanche unclamped inductive switching (UIS) ruggedness and long short-circuit withstand time.

With a solid foundation of high-performance ceramics, the new SiC modules are suitable for electric vehicle (EV) charging, on-board chargers (OBCs), DC–DC converters, E-compressors, fuel cell converters, medical power supplies, photovoltaic inverters, energy storage systems, solar and wind energy systems, data-center power supplies, UPS/PFC circuits, Vienna rectifiers, and other automotive and industrial applications.

To ensure that each module has a stable gate threshold voltage and high-quality gate oxide, SemiQ’s modules undergo gate burn-in testing at the wafer level. Besides the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) allow the required automotive- and industrial-grade quality levels to be achieved. The devices also have extended short-circuit ratings. All modules have undergone testing exceeding 1350V.

“SemiQ’s commitment to reliability and testing sets us apart in the semiconductor industry,” reckons president Dr Timothy Han. “Our high-performance QSiC 1200V MOSFET modules are proven to withstand challenging conditions, enabling engineers to develop reliable systems for the renewable, automotive, medical and industrial sectors.”

See related items:

SemiQ launches 1200V 40mΩ SiC MOSFET

Tags: SiC power MOSFET


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