AES Semigas


17 April 2024

Infineon provides Shanghai-based FOXESS with power semiconductors

Infineon Technologies AG of Munich, Germany is supplying its power semiconductor devices to inverter and energy storage system maker FOXESS of Shanghai, China (founded in 2019). Specifically, Infineon will provide CoolSiC MOSFETs 1200V, which will be used with EiceDRIVER gate drivers for industrial energy storage applications. At the same time, FOXESS’ string photovoltaic (PV) inverters will use Infineon’s IGBT7 H7 1200V power semiconductor devices.

The global market for photovoltaic energy storage systems (PV-ES) has grown rapidly in recent years, notes Infineon. As competition in the PV-ES market accelerates, improving power density has become key, and how to improve efficiency and power density for energy storage applications has attracted much attention. Infineon says that its CoolSiC MOSFET 1200V and IGBT7 H7 1200V series power semiconductor devices adopt the latest semiconductor technologies and design concepts tailored to industrial applications.

“Thanks to the support of Infineon's advanced components, FOXESS’ products have been significantly improved in terms of reliability and efficiency. This has been an important driving force for FOXESS’ growth,” comments FOXESS’ chairman Zhu Jingcheng. “Infineon’s technical support and product quality have not only strengthened our competitiveness but also expanded our presence in the market.”

With high power density, Infineon claims that its CoolSiC MOSFETs 1200V can reduce losses by 50% and provide ~2% additional energy without increasing the battery size, which is especially beneficial for high-performance, lightweight and compact energy storage solutions. FOXESS’ H3PRO 15–30kW energy storage series uses Infineon’s CoolSiC MOSFETs 1200V for all models. Due to Infineon’s performance, the H3PRO series has achieved an efficiency of up to 98.1% and what is claimed to be excellent EMC performance, leading to the H3PRO series seeing rapid sales growth in the global market.

Infineon says that its TRENCHSTOP IGBT7 H7 650V/1200V series has lower losses and helps to improve the overall efficiency and power density of inverters. In high-power inverter projects, high-current mold packaged discrete devices with current-handling capability above 100A can reduce the number of IGBTs in parallel and replace the IGBT module solution, further improving system reliability and reducing costs; in addition, the H7 series has become an industry benchmark for its high-quality performance and greater resistance to humidity, it is claimed. At present, FOXESS’ main industrial and commercial model, the R Series 75–110kW, redefines the overall design of the 100kW model by using IGBT7 H7 series discretes, and the efficiency of the whole system can reach 98.6%. Due to the low power loss and high power density of the IGBT7 H7 series in discrete packages, technical problems such as current sharing in the paralleling process can be simplified and optimized.

See related items:

Infineon launches CoolSiC MOSFET Generation 2

Infineon providing 1200V CoolSiC MOSFET devices for Sinexcel’s energy storage systems

Infineon providing 1200V CoolSiC MOSFETs for Infypower’s EV charger stations

Tags: Infineon



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