AES Semigas


25 January 2024

Infineon providing 1200V CoolSiC MOSFET devices for Sinexcel’s energy storage systems

Infineon Technologies AG of Munich, Germany has announced a partnership in which it will provide its 1200V CoolSiC MOSFET power semiconductor devices — in combination with EiceDRIVER compact 1200V single-channel isolated gate drive ICs — to Sinexcel Electric Co Ltd of Shenzhen, China (a provider of core power equipment and solutions for the energy Internet) to further improve the efficiency of energy storage systems.

Driven by the carbon peaking and carbon neutrality strategy and the new energy wave, the domestic energy storage market has maintained sustained and rapid development in recent years. According to the Chinese Ministry of Industry and Information Technology, in first-half 2023 the newly installed capacity of energy storage reached 8.63GWh, equivalent to the total installed capacity of previous years. The efficiency and power density of energy storage systems are important factors of product competitiveness, while the size, weight and cost of energy storage systems are closely related to the energy conversion efficiency and directly affect the product cost, notes Infineon. Power semiconductor components hence play a crucial role.

“The SiC power solution is an important component for future green energy production and storage applications,” says Yu Daihui, senior VP of Infineon Technologies and head of the Green Industrial Power Division in Greater China. “Infineon’s cooperation with Sinexcel in the field of energy storage inverters enables energy storage systems to achieve advantages such as high efficiency, small size and light weight, providing a solid guarantee for high-reliability and high-performance energy storage systems,” he adds.

“By using Infineon’s SiC devices, Sinexcel’s energy storage products are obviously more compact and flexible, with significantly higher efficiency and lower losses, which reduces the heat dissipation cost of systems, is conducive to the long-term efficient and stable operation of products, and helps end-users improve their operational stability and shorten their return-on-investment cycle,” says Sinexcel’s deputy general manager Wei Xiaoliang. “This greatly improves the system competitiveness of our products and enhances the trust of clients in our energy storage products and the brand awareness of Sinexcel.”

Infineon says that, due to their high power density, its 1200V CoolSiC MOSFETs can reduce losses by 50% and provide ~2% additional energy without increasing the battery size, which is especially beneficial for high-performance, lightweight and compact energy storage solutions. By using 1200V CoolSiC MOSFETs and EiceDRIVER compact 1200V single-channel isolated gate drive ICs, Sinexcel’s energy storage converters achieve high power density, minimal electromagnetic radiation and interference, high protection performance and high reliability, claims Infineon. This allows industry-leading system efficiency of up to 98% (1% higher than that of traditional solutions, it is reckoned), better meeting the needs of on-grid and off-grid energy storage applications in both domestic and overseas markets.

See related items:

Infineon providing 1200V CoolSiC MOSFETs for Infypower’s EV charger stations

Infineon extends CoolSiC M1H technology portfolio with 1200V SiC MOSFETs

Tags: Infineon SiC MOSFET



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