AES Semigas


30 April 2024

Guerrilla RF acquires GaN device portfolio from Gallium Semiconductor

Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which develops and manufactures radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — has finalized the acquisition of entire portfolio of gallium nitride (GaN) power amplifiers and front-end modules of Singapore-based Gallium Semiconductor, which designs and manufactures RF GaN products for 5G mobile communications, aerospace & defense, and industrial, scientific & medical (ISM) applications.

Guerrilla RF acquired all previously released components as well as new cores under development at Gallium Semiconductor. Additionally, all associated intellectual property (IP) has been transferred. By integrating the assets, Guerrilla RF aims to significantly enhance its ongoing efforts to develop and commercialize a new line of GaN devices tailored for wireless infrastructure, military and satellite communications applications.

Market analyst firm Yole Group forecasts that the RF GaN device market will double from $1.3bn in 2022 to $2.7bn by 2028, due mainly to double-digit expansion in three key market segments relevant to Guerrilla RF: telecom infrastructure (including 5G and point-to-point systems), military, and satellite communications, with projected compound annual growth rates (CAGRs) of 10%, 13% and 18%, respectively. Moreover, the GaN-on-SiC variants utilized in Gallium Semiconductor’s designs are forecasted to dominate this market for the next decade.

“As the company continues to evolve as an RFIC and MMIC supplier, integrating GaN technology into our expanding portfolio is imperative,” reckons Guerrilla RF’s CEO & founder Ryan Pratt. “GaN represents a pivotal advancement towards offering comprehensive signal chains for our target markets. Prior to this acquisition, Guerrilla RF was already advancing GaN device development as part of its organic growth strategy. The acquisition of Gallium Semiconductor’s portfolio significantly accelerates this strategic initiative. We anticipate this transaction will yield meaningful revenue with favorable margins in the near and long term,” he adds.

“Merging these new products into Guerrilla RF’s portfolio is expected to be fast and seamless,” says Gallium Semiconductor’s CEO Henk Thoonen. “Both companies share common foundry partners for GaN and GaAs products and target similar applications and market segments,” he adds. “Guerrilla RF will inherit a diverse range of released and sampling products, encompassing simple, unmatched transistors to fully integrated asymmetric Doherty PAs. With rated peak power levels ranging from 5W to 400W, these products complement Guerrilla RF’s existing portfolio of indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) and gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) amplifiers which are suited for power levels of 2W and below.”

Guerrilla RF has already begun actively integrating these new components into its ordering system, with full portfolio integration anticipated by June.

See related items:

Guerrilla RF reports record deliveries in November

Gallium Semiconductor releases nonlinear model library for GaN product portfolio

Gallium Semiconductor unveils new GaN transistor product portfolio

Tags: GaN RF




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