AES Semigas


27 September 2022

Gallium Semiconductor unveils new GaN transistor product portfolio

In booth #B25 at European Microwave Week (EuMW 2022) in Milan, Italy (25-30 September), Singapore-based RF gallium nitride (GaN) semiconductor supplier Gallium Semiconductor has unveiled its broad portfolio of RF power transistor products.

Specifically, Gallium Semi is showcasing a wide variety of GaN solutions for 5G infrastructure, aerospace & defense, public safety, and industrial, scientific & medical (ISM) applications. Product highlights include:

  • known good die of GaN devices optimally designed for low thermal resistance and ranging from 10W to 400W of saturated output power;
  • unmatched GaN transistors in low-cost plastic DFN packages with high reliability and heat dissipation;
  • easy-to-use broadband and pre-matched GaN transistors in air-cavity packages;
  • innovative dual-path transistor solutions for 5G networks with excellent digital pre-distortion capability.

The products deliver what is claimed to be optimal performance for output power, gain, efficiency and bandwidth. “Customers continue to demand RF power amplifiers that deliver high performance with high efficiency,” says Michael Guyonnet, VP of networks. “Our innovative GaN solutions provide breakthrough performance that customers require for their critical communication, radar and ISM applications.”

The new RF power transistors and evaluation boards are currently available for sampling to qualified customers.

See related items:

Gallium Semiconductor opens Nijmegen R&D Center

RF GaN firm Gallium Semi appoints VP of networks

Tags: GaN RF



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