News: Microelectronics
10 October 2023
CGD’s ICeGaN HEMTs awarded ‘Best Demo’ at Innovation Zone of TSMC’s Europe Tech Symposium
Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge Department of Engineering’s Electrical Power and Energy Conversion group in 2016 and designs, develops and commercializes power transistors and ICs that use GaN-on-silicon substrates — says that its ICeGaN GaN HEMT system-on-chip (SoC) was awarded ‘Best Demo’ at the Innovation Zone of the 2023 Europe Technology Symposium of Taiwan Semiconductor Manufacturing Co (TSMC).
CGD’s ICeGaN technology, which has entered high-volume production for global customers using TSMC’s GaN process technology, is bringing the complexity of a typical external driving circuit into the GaN HEMT, monolithically integrated. This concept reduces the component count at the PCB level and is said to significantly improve the robustness and reliability of the power transistor and the whole system, while enabling the user to couple it with a gate driver of choice. This concept is easily scalable to higher power and voltages, which CGD is actively pursuing. ICeGaN is claimed to be an industry first: GaN eMode HEMTs can be driven like a silicon MosFET. Recognizing the differentiation that it brings to the market, ICeGaN was voted ‘Best Demo’ by visitors to the Innovation Zone, TSMC’s showcase for start-up customers’ cutting-edge products at its largest annual event in Europe.
“CGD recognizes TSMC’s leadership in high-voltage GaN – we believe that they have the most mature and reliable process in the industry, which is why we chose to have our proprietary ICeGaN technology SoCs made there. Consequently, we are also delighted to win TSMC’s prestigious award for innovation,” says CEO & co-founder Giorgia Longobardi. “Innovation is one of CGD’s key values, and we aim to achieve a leadership position through technology. The award is also a very real demonstration of the success that our two companies are achieving in bringing game-changing, innovative GaN technology to the market,” she adds.
“TSMC is excited to cooperate with CGD to deliver its easy-to-use 650V ICeGaN GaN transistors in high volume to companies working on diverse applications worldwide,” says TSMC Europe’s general manager Paul De Bot. “We look forward to close collaboration with them in the field of GaN power semiconductor technology.”
ICeGaN H2 single-chip eMode GaN HEMTs — CGD’s second-generation of 650V GaN ICs recently launched on the market — have demonstrated record low losses in No Load – Light Load operations, which is key for many consumer and industrial applications. Together with the H1 portfolio, CGD has demonstrated what is claimed to be the highest efficiency and reliability in the entire range 65W to 3kW, both at the TSMC European event and in several conferences worldwide. CGD aims to extend its portfolio in the near future.
ICeGaN includes a monolithically integrated GaN interface circuitry within the power transistor chips. This simplifies their use, enabling them to be driven like a silicon MOSFET, without the need for special gate drivers, complex and lossy driving circuits, a negative voltage supply or external clamping components. This design results in devices that are said to be extremely rugged and reliable, while achieving the highest performance among available eMode GaN technologies.
CGD signs global distribution deal with DigiKey
CGD launches second series of ICeGaN 650V HEMTs
