20 June 2023
CGD signs global distribution deal with DigiKey
Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge Department of Engineering’s Electrical Power and Energy Conversion group in 2016 and designs, develops and commercializes power transistors and ICs that use GaN-on-silicon substrates — has signed a global distribution deal with DigiKey of Thief River Falls, MN, USA. DigiKey will hold substantial stocks of CGD’s ICeGaN gallium nitride high-electron-mobility transistors (HEMTs) and related products.
“This agreement is a significant step for CGD as we are scaling-up the business and building a GaN ecosystem that will help engineers explore and utilize the benefits of ICeGaN for high-voltage power conversion,” says chief commercial officer Andrea Bricconi. “DigiKey is very well respected and a trusted brand, and we are sure that this deal will enable CGD to penetrate and support new markets worldwide,” he adds.
“We are pleased to add Cambridge GaN Devices (CGD) to our Fulfilled by DigiKey program,” says Missy Hall, VP new market development at DigiKey. “By including CGD’s ICeGaN series transistors in our portfolio, DigiKey is delivering even more energy-efficient options for our customers to choose from.”
Recently, CGD launched its 650V H2 Series ICeGaN gallium nitride HEMT family. The new parts reduce design complexity as they can be driven using commercially available industry gate drivers. In terms of efficiency, ICeGaN HEMTs feature a QG that is 10x lower than silicon parts, and QOSS is 5x less. This reduces switching losses, enabling what is claimed to be industry-leading efficiency performance that result in reductions in system size, weight and cost. H2 Series ICeGaN HEMTs also address reliability and ruggedness concerns by employing CGD’s smart gate interface that is said to virtually eliminate typical enhancement-mode GaN weaknesses. Devices feature improved over-voltage robustness, higher noise-immune threshold, dV/dt suppression and ESD protection.