News: Microelectronics
1 September 2026
Nexperia explores power semiconductor collaboration with Aurobay for electrified powertrains
Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) says it will explore a strategic collaboration on advanced power semiconductor solutions for automotive applications with Aurobay Technologies, a division of Horse Powertrain Ltd (a joint venture between Renault Group and Geely). The collaboration aims to combine Nexperia’s expertise in gallium nitride (GaN) and silicon carbide (SiC) with Aurobay’s capabilities in powertrain system design and integration. Building on an existing collaboration, the firms aim to evaluate how closer cooperation across semiconductor development and powertrain integration can support the next generation of electrified and hybrid vehicle platforms.
The collaboration follows the deployment of Nexperia’s GaN devices in Aurobay’s highly integrated power generation system for range extender applications. The project demonstrated the potential of wide-bandgap semiconductor technologies to improve efficiency, reduce system size and weight, and enhance overall performance in demanding automotive environments.
Building on this foundation, Nexperia and Aurobay will assess opportunities to further optimize power electronics architectures for applications including traction inverters and power generation systems. By combining Nexperia’s WBG expertise with Aurobay’s experience and capabilities in powertrain systems, the companies intend to evaluate joint engineering approaches, including early-stage co-design and system-level optimization.
As vehicle manufacturers seek higher efficiency, greater power density and more compact powertrain architectures, wide-bandgap semiconductor technologies are becoming increasingly important enablers of electrification. Through this collaboration, Nexperia and Aurobay aim to explore new approaches that accelerate the adoption of advanced power semiconductor solutions and support the development of scalable, high-performance propulsion systems for future mobility.
“GaN and SiC technologies offer significant opportunities to improve efficiency, power density and system performance in automotive applications,” says Edoardo Merli, head of business group Wide-Bandgap, IGBTs and Modules at Nexperia. “By working closely with Aurobay Technologies, we can better understand system-level requirements and evaluate how advanced semiconductor technologies can deliver measurable benefits at the vehicle level. We look forward to building on our successful collaboration and exploring new opportunities together,” he adds.
“Our experience integrating Nexperia’s GaN technology into a highly integrated power generation system demonstrated the potential of close collaboration across the value chain,” says Dr Ma Yongquan, chief engineer, Advanced Engineering on Electrical Components at Aurobay. “By combining our expertise in powertrain systems with Nexperia’s semiconductor innovation, we can evaluate new approaches to improving efficiency, performance and packaging for future electrified propulsion systems.”
