News: Microelectronics
1 September 2026
Navitas ships first US-made Gen 5 GaNFast products from GlobalFoundries
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA says that the first shipments of US-manufactured 5th Generation GaNFast technology, in partnership with GlobalFoundries of Malta, NY (GF, the only US-based pure-play foundry with a global manufacturing footprint, including facilities in the USA, Europe and Singapore), will begin in September, marking a milestone in strengthening the US domestic GaN ecosystem for AI infrastructure and critical national security applications.
In November 2025, Navitas and GF announced a long-term strategic partnership to accelerate US GaN innovation and domestic manufacturing. Navitas developed its Gen 5 GaNFast FETs and power integrated circuits (ICs) for production at GF’s US-based 200mm GaN-on-silicon manufacturing facility in Burlington, Vermont.
The first shipment of the Gen 5 GaNFast family is a milestone in the Navitas–GF collaboration, bringing Navitas’ next-generation GaNFast technology into a US production foundry for AI infrastructure, performance computing, industrial electrification, and critical national security applications.
Since 2014, Navitas has established GaNFast FETs and power ICs that integrate power, drive, control, sensing and protection. With more than 300 issued and pending patents across GaN and SiC, Navitas has built proprietary expertise in GaN process design kits (PDKs), device architectures and integrated power technologies.
Navitas applied this expertise to optimize its proprietary Gen 5 GaNFast technology and device architectures for manufacturing on GF’s 200mm GaN-on-silicon platform. Combined with GF’s decades of semiconductor manufacturing expertise and high-volume production capabilities, the partnership is delivering a US-based supply of GaN power semiconductors for AI infrastructure and other critical applications.
“Together with GlobalFoundries, we have established a trusted US-domestic manufacturing source for our GaNFast Gen 5 and future generations, which will play a critical role in powering AI infrastructure and high-performance computing while strengthening the resilience of the US semiconductor ecosystem,” says Navitas’ president & CEO Chris Allexandre.
“The first shipment from our US manufacturing line demonstrates how GF and Navitas are turning advanced GaN innovation into a secure, scalable domestic supply,” says Kannan Soundarapandian, senior VP of GF’s power business. “By combining Navitas’ power semiconductor leadership with GF’s manufacturing expertise, we are enabling the high-efficiency power solutions needed for AI infrastructure and other critical applications while strengthening the resilience of the US semiconductor ecosystem.”
The initial product family is expected to include 650V GaN FETs with RDS(ON) values of 11mΩ, 18mΩ, 50mΩ, 120mΩ and 150mΩ, with first wafers scheduled to ship in September, internal samples in October, and strategic customer samples before the end of the year.
GlobalFoundries and Navitas partner on US GaN technology and manufacturing
