News: Microelectronics
28 September 2026
Fraunhofer IAF develops broadband distributed amplifier MMIC for data centers, measurement systems and sensors
Fraunhofer Institute for Applied Solid State Physics IAF of Freiburg, Germany has developed a broadband distributed amplifier monolithic microwave integrated circuit (MMIC) chip suitable for use in data centers, measurement systems and sensors. Modern data centers, high-precision measurement systems and high-resolution radar sensors rely on extremely broadband amplifier chips that feature both low noise and high output power.
Based on Fraunhofer IAF’s proprietary indium gallium arsenide (InGaAs)-on-silicon high-electron-mobility transistor (HEMT) technology with a gate length of 20nm, the distributed amplifier (DA) achieves a gain of 11 ± 2dB in the frequency range 4–420GHz. Previous generations of the chips were still fabricated on gallium arsenide (GaAs) substrates with a gate length of 35nm.
Picture: The broadband distributed amplifier chip achieves a gain of 11 ± 2dB between 4GHz and 420GHz. The image shows the previous generation of the amplifier (courtesy of Fraunhofer IAF).
The MMIC was first presented in the article: F. Thome and A. Leuther, ‘A 4–420GHz Distributed Amplifier MMIC in a 20nm InGaAs-on-Si HEMT Technology With 11 ± 2dB Gain’, in IEEE Microwave and Wireless Technology Letters, vol. 35, no. 6, p844–847, June 2025, doi: 10.1109/LMWT.2025.3551639.
High bandwidth with high output power and low noise
“The MMIC amplifier we developed is characterized by a unique combination of the relevant parameters: bandwidth, noise and output power,” says the MMIC’s developer Dr Fabian Thome, deputy head of Fraunhofer IAF’s High-Frequency Electronics business unit. “Up to a frequency of 202GHz, it achieves noise figures between 3.2dB and 7.7dB; in a setting optimized for low noise, these range from 2.8dB to 6.7dB. The saturated output power ranges between 6dBm and 8dBm.”
Broadband MMICs in practice: data centers, measurement systems, radar sensors
Such high-bandwidth amplifiers are particularly relevant for the latest generation of data centers that use optical data transmission. They are used in interfaces where optical signals are converted to electrical signals or electrical signals are converted to optical signals. Optical data transmission enables higher speeds and more compact designs. The increasing prevalence of artificial intelligence applications is driving a massive rise in demand for modern data centers.
In addition, high-bandwidth chips with low noise and high output power enable significantly more precise measurement systems and higher-resolution radar sensors. Higher-performance chips significantly increase the resolution, range and sensitivity of these systems.
Fraunhofer IAF at EuMW
Along with other innovations in high-frequency electronics, Fraunhofer IAF is presenting samples of the new amplifier chip in booth B35 at 29th European Microwave Week (EuMW 2026) exhibition at ExCeL London, UK (4–9 October).
FormFactor Inc, a collaborating measurement technology manufacturer, is demonstrating a live measurement of the chip at its booth D10.
Researchers from Fraunhofer IAF are also presenting their latest findings as part of the EuMW conferences:
5 October
- 8:30am–6:30pm, Room 15, WM06 [Workshop]
Fabian Thome: ‘InGaAs Metamorphic HEMT Technologies for Cutting-Edge Low-Noise, High-Frequency, and Ultra-Wideband Applications’; - 9:10–9:30, Room 10, EuMIC02-3
Maxime Moulin: ‘Scalable Small-Signal Modeling of 20nm InGaAs HEMTs Using a DC-Biased Backside Field Plate’; - 5:30–5:50pm, Room 11, EuMIC12-3
Eric Sigle: ‘Extended D-Band Frequency Quadrupler Based on Harmonic Source- and Load-Pull Measurements’.
6 October
- 9:50–10:10, Room 17, EuMIC15-5
Rainer Weber: ‘A 220 to 330GHz Dual-IF Receiver Chip in 35nm mHEMT Technology’; - 11:50–12:10, Room 17, EuMIC17-3
Patrick Umbach: ‘Zero-IF Capable Single-Balanced HEMT Mixers with 2 ± 2dB Conversion Loss from 110 to 220GHz’; - 3:10–3:30pm, Room 17, EuMIC18-4
Felix Heinz: ‘Extended W-band Low-Noise Amplifiers in 35nm Metamorphic High-Electron-Mobility Transistor Technology’; - 3:30–3:50pm, Room 17, EuMIC18-5
Thomas Zieciak: ‘A Compact D-Band GaN LNA MMIC for Monolithic Transceiver Integration’.
7 October
- 6:10–6:30pm, Room 7, EuMC35-5
Daje Weber-Trebesch: ‘A Q-Band GaN Doherty-Like OLMBA with Single RF Input’.
