News: Microelectronics
7 October 2026
Qorvo launches X-band RF front-end for AESA radar
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has announced an X-band RF front-end solution that combines high transmit output with low-noise, high-linearity receive performance for active electronically scanned array (AESA) radar. Developed around a quad architecture, the solution reduces RF content inside the array lattice.
System-level X-band architecture
X-band radar systems are increasingly adopting AESAs, including flat-panel phased-array antennas. The lattice spacing limits the area available for the beamformer, front-end modules (FEMs) and power control devices. External driver amplifiers and discrete power amplifier (PA) control and switching circuits consume valuable lattice space and introduce additional interfaces that customers must accommodate in their designs.
Qorvo’s QPX0252 is a four-channel 7.9–12GHz beamformer IC. Its high transmit output power drives compatible Qorvo FEMs, such as the QPF5012 directly, eliminating the need for external driver amplifiers. Companion Qorvo devices provide GaN PA bias control and RF switching.
“Beamformers are typically designed as stand-alone components, leaving customers to integrate the FEMs, bias control and RF switching around them,” says Diwakar Vishakhadatta, VP, Defense & Aerospace Products at Qorvo. “We developed the QPX0252 as part of the X-band front-end architecture, defining its transmit, receive and control functions around the requirements of the radar system.”
Selectable receive performance
In high-power radar systems, the Qorvo FEM establishes a low system noise figure while the QPX0252 operates in a high-linearity mode. Qorvo says that its system analysis demonstrates up to 20dB higher cascaded input P1dB compared to other offerings in the market.
Availability
QPX0252 samples and evaluation kits are available now. The IC works with Qorvo X-band FEMs already in production across a range of power levels and configurations. Compatible gate-bias, drain-bias and RF switch-control devices support sub-100ns Tx/Rx switching and are also sampling now.
Qorvo achieves key X-band GaN milestone in DARPA THREADS program
