News: Suppliers
7 October 2026
Mivium demonstrates commercially viable production of phase-pure h-GaN nanoparticles
Materials technology company Mivium Inc of Fremont, CA, USA has achieved the production of high-purity submicron gallium nitride (GaN) particles using its proprietary technology platform (which extends to additional wide-bandgap and advanced semiconductor materials including gallium oxide and boron nitride).
The development addresses a critical constraint in wide-bandgap semiconductor manufacturing, enabling new device architectures and integration strategies previously considered economically unfeasible, says the firm.
Independent third-party characterization confirms that Mivium has produced phase-pure hexagonal wurtzite gallium nitride (h-GaN) particles with a particle size distribution of 300–500nm, a scale that opens entirely new processing pathways for GaN thin-film application and substrate production. The material exhibits:
- uniform particle size distribution in the submicron range;
- phase-pure polycrystalline structure (hexagonal wurtzite);
- high faceted morphology, indicating stable crystal quality;
- scalability to industrial volumes.
“Nobody has demonstrated the capability to produce submicron GaN particles at this quality level and scale,” claims chief technology officer Chandra Deshpandey PhD, emeritus professor of Materials Science and Engineering at University of California Los Angeles (UCLA). “What makes this particularly exciting is not just achieving submicron particle size, but doing so with phase purity and uniformity that meet semiconductor-grade requirements. This opens possibilities for new device architectures and integration strategies that simply weren’t accessible before.”
In July, Mivium closed a $4.23m private-placement financing, bringing total capital raised to more than $10.5m. The funding supports continued R&D, materials characterization, thin-film development, and engagement with potential commercial and strategic partners.
GaN thin-film R&D
Mivium is also advancing GaN thin-film development derived from its submicron powder platform, with initial deposition work completed in-house. The work expands its R&D roadmap beyond powder feedstock and toward potential semiconductor and photonics applications.
Availability
At SEMICON West 2026 in the Moscone Center in San Francisco, CA, USA (13–15 October), Mivium is showing samples and characterization data in booth 5582. Evaluation samples are available to qualified crystal-growth, epitaxy and materials teams. Contact partners@mivium.com.
