News: Microelectronics
3 November 2026
SemiQ previewing Gen4 1700V, 830A SiC MOSFET modules at electronica
On the stand (A6.620) of its distribution and exhibition partner Alfatec at electronica 2026 in Munich, Germany (10–13 November), SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures custom silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — is giving an advanced preview of an upcoming Gen4 1700V SiC half-bridge MOSFET module (GCMS1P7C170S4B1-N).
The device uses SemiQ’s fourth-generation SiC to enable the highest current capability (830A) and has an ultra-low RDSon of just 1.7mΩ. It is housed in a standard 62mm x 152mm S4 package, which allows power design engineers to seamlessly upgrade existing systems without costly redesigns.
The new lineup has been designed to meet the rising power and thermal demands of electric vehicles (EV), motor drives, smart-grid infrastructure, and uninterruptible power supplies (UPS).
SemiQ is also exhibiting its QSiC Gen3 SiC modules, which have been developed for high-power applications, such as EV charging stations, energy storage systems, and industrial motor drives.
These include:
- QSiC Dual3 Modules: This line of 1200V half-bridge MOSFET modules enables the creation of power converters with at is claimed to be industry-leading conversion efficiency and power density.
- S3 Modules: Featuring a 608A half-bridge module with an ultra-low 2.4mΩ RDSon and a junction-to-case thermal resistance (RθJC) of just 0.07oC/W.
- SOT-227 Modules: These include five modules with RDSon values of 7.4mΩ, 14.5mΩ and 34mΩ, optimized for server power supplies, battery chargers, and PV inverters.
- B2T1 Six-Pack Modules: Spanning an RDSon range of 19.5–82mΩ designed to minimize parasitics in motor drives and advanced AC–DC converters.
- B3 Full-Bridge Modules: Delivering up to 120A with RDSon as low as 8.6mΩ. These modules maximize power density for high-voltage DC–DC systems.
“Our Gen4 SiC technology delivers unmatched efficiency and reliability for high-power applications, and the previewed 1700V MOSFET module takes this concept further, delivering 830A with an exceptionally low on-resistance,” says president Dr Timothy Han.
