News: Microelectronics
13 November 2026
Navitas files further patent infringement lawsuit against Renesas
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN), GeneSiC silicon carbide (SiC) power semiconductors and integrated voltage regulator (IVR) technologies — has filed a lawsuit in the US District Court for the Eastern District of Texas charging Renesas Electronics Corp of Tokyo, Japan with six counts of patent infringement.
Navitas previously filed a separate lawsuit on 10 August against Renesas alleging that their major GaN product lines, including SuperGaN power semiconductors, infringe patents in Navitas’ GaN patent portfolio.
Navitas says that the ongoing litigation has not deterred Renesas from its further and continued alleged infringement of its patent rights. On 30 September, despite ongoing litigation concerning its other SuperGaN products, Renesas announced its newest 650V SuperGaN GaN FET, TP65H020G4PLSGBD.
Renesas further expanded its GaN portfolio on 6 October by introducing its REXGaN family of 100V enhancement-mode GaN power transistors, including RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC.
“Navitas is an early GaN innovator, and we pioneered bringing GaN technology to scale. We’ve heavily invested in R&D, respect valid intellectual property rights, and we expect our competitors to do likewise,” says Navitas’ senior VP & chief technology officer Siddarth Sundaresan. “Competitors flagrantly disregarding our intellectual property rights will not go unanswered.”
The lawsuit accuses the TP65H020G4PLSGBD of four counts of patent infringement for each of US Patent Nos. 9,929,079; 11,545,838; 11,770,010; and 11,862,996 and Renesas’ enhancement-mode GaN power transistor family of two counts of patent infringement for each of US Patent Nos. 9,613,891 and 10,269,687.
TP65H020G4PLSGBD, which is a 650V, 20mOhm (typical), in a dual-side cooled (DSC) PQFN 8x8, targeting 800V data-center DC-DC converters, follows almost 7 months after Navitas first announced its 800V-to-6V power delivery board at NVIDIA GTC in March 2026, featuring 650V GaNFast FETs in the DFN 8x8 dual-side-cooled (DSC) package.
Navitas’ 650V GaNFast FETs in DFN 8x8 DSC has progressed to commercial deployment, with samples delivered and products shipped in volume to multiple customers, demonstrating the firm’s ability to bring next-generation GaN power solutions from development to commercialization.
Navitas says that it built its business through independent research, engineering excellence and investment, developing technologies backed by a robust global intellectual property portfolio of more than 450 patents issued or pending.
Both patent infringement lawsuits against Renesas Electronics remain pending.
