News: Microelectronics
9 November 2026
Infineon presents first functional power devices on 300mm SiC wafers
Infineon Technologies AG of Munich, Germany has processed 300mm silicon carbide (SiC) wafers into functional power devices at its fab in Villach, Austria, becoming the first company to pioneer this innovation in a full-scale semiconductor fab environment. The milestone was realized by utilizing existing silicon manufacturing equipment.
The firm says that this early achievement of functional power devices reflects its focus on providing a comprehensive portfolio of high-performance SiC power semiconductors and ensuring long-term supply. Chip production on 300mm wafers is technologically more advanced and significantly more efficient than 200mm wafers, since the larger wafer diameter offers 2.3 times more chips per wafer.
“With silicon, gallium nitride and now silicon carbide 300mm wafers, we are in a leading position to scale semiconductor manufacturing and drive profitable growth,” says CEO Jochen Hanebeck.
Picture: Infineon’s CEO Jochen Hanebeck with the 300mm power SiC wafer.
The milestone demonstrates the potential of future full-scale industrialization of SiC on 300mm wafers. Infineon will plan the 300mm SiC technology and ramp timing in close collaboration with its customers and partners, while further executing on its 200mm SiC manufacturing roadmap. Advanced SiC power technology provides customers with a cost-effective and secure supply base for automotive, renewable energy, industrial and AI data-center applications, says Infineon.
In parallel, Infineon has also proofed the feasibility of its Cold Split technology with 300mm SiC at its site in Dresden, Germany. Cold Split separates wafers from a SiC boule with less material loss and substantially reduced processing time than conventional wire sawing, so more wafers can be obtained from the same crystal with less capital expenditure.
Infineon reckons that both of these developments position it well to scale SiC technology in line with market demand and meet the evolving needs of its customers.
Infineon manufactures semiconductors based on all three relevant materials: silicon, silicon carbide and gallium nitride. On 27 October, it announced an approximately €1.1bn investment in a high-volume manufacturing facility for GaN power semiconductors on 300mm wafers in Villach. The latest SiC achievement extends this approach to a second wide-bandgap material.
Infineon is exhibiting the processed 300mm SiC wafer in booth 502 (Hall C3) at the electronica trade show in Munich (10–13 November).
Infineon establishing first high-volume fab for GaN power semiconductors on 300mm wafers in Europe
