News: Microelectronics
5 November 2026
GaNrich providing 40–1200V GaN power device portfolio
Gallium nitride (GaN) technology firm GaNrich Semiconductor Corp of Zhubei City, Taiwan says that it has established a portfolio of 40V–250V low-mid voltage and 650V–1200V high-voltage GaN power devices on both GaN-on-silicon and GaN-on-sapphire wafer platforms, serving applications including AI data centers, battery backup units (BBUs), robotics, drones, electric vehicles (EVs), and on-board chargers (OBCs).
GaNrich says it is hence one of the few suppliers globally supplying full-voltage-range GaN product coverage, and currently the only GaN designer that can provide mass-production GaN products for customer validation in Taiwan.
With high-speed switching, low conduction loss, and low parasitic capacitance, GaNrich says that its products provide greater design flexibility to optimize both efficiency and power density. GaNrich is also a full-service provider, offering mask design, advanced packaging, system module integration, and reliability testing.
Full-voltage-range 40V–1200V GaN portfolio
For 40–250V GaN power devices, GaNrich provides advanced package solutions that are compatible with existing standard silicon devices. Having completed 5x6, 5x3 and 3x3 product development and supply chain optimization, GaNrich targets applications where traditional silicon devices have reached their performance limits. In addition, by integrating gate drivers into the same package, GaNrich says that it can accelerate customer product adoption by simplifying circuit design.
GaNrich’s 650–1200V GaN power devices address high-voltage power-conversion applications including high-power AI data-center power supplies, AC–DC conversion, and EVs.
With a comprehensive voltage and product coverage, GaNrich says that it can provide GaN device solutions tailored to different power topologies from low/mid-voltage DC–DC/DC–AC conversion to high-voltage AC–DC/DC–DC conversion. To minimize design effort, the devices also offer pin-to-pin drop-in replacements for traditional silicon components.
In addition, as power topologies continue to evolve, certain GaN devices can enter application segments served by silicon carbide (SiC). GaNrich plans to launch a 1200V bidirectional switching (BDS) product that can reduce system component count while increasing voltage design margin. This enables single-stage power conversion architecture and satisfies the requirements of next-generation power topologies.
Deepening core GaN technologies: non-China supply chain
GaNrich notes that the global GaN market is currently highly concentrated by China-based supply chains, while new in-house capacity demands from European and US customers remains. In addition to the coordination of Taiwan-based GaN wafer manufacturing and packaging resources, GaNrich also collaborates with global supply chain partners to establish a complete product-development ecosystem, providing global customers with a diverse non-China supply chain option.
Validated by leading global customers: accelerating global market penetration
GaNrich says that its GaN products are steadily entering global markets. Selected products have been validated by leading global customers, for applications such as automotive, energy storage and industrial sectors.
