News: Microelectronics
27 May 2026
ST adds 700V PowerGaN devices to STPOWER portfolio
New gallium nitride (GaN)-based power semiconductors from STMicroelectronics of Geneva, Switzerland are designed to improve efficiency and increase power density in high-voltage power supplies for high-demand applications that support electrification. The 700V PowerGaN devices in the STPOWER portfolio address challenges such as rising AI server power consumption and the need for higher-performance power conversion beyond the limits of conventional silicon technologies.
Engineered for a 700V operating rating, the new PowerGaN devices support reliable high-power operation and higher-frequency topologies. PowerGaN’s inherent advantages, including low conduction losses, very low switching loss at high operating frequencies, and zero reverse-recovery charge, enable reduced system size, weight, and operating temperature. These attributes are important for power semiconductors used in robotics, industrial power supplies, and smart-grid converters for energy generation, distribution and storage.
“Broadening our PowerGaN portfolio with new 700V devices extends the benefits of gallium nitride technology into medium-power and high-power applications,” says Mario Aleo, executive VP, Power & Discrete Sub-Group, at ST. “We will continue to expand the portfolio with additional voltage ratings and features, reinforcing our commitment to GaN for tomorrow’s AI servers, humanoid robotics, industrial power, and advanced consumer power applications including home appliances.”
The seven new GaN enhancement-mode high-electron-mobiliity transistors (HEMTs) now joining ST’s 700V PowerGaN series cover a wide range of continuous current ratings, from 6A to 29A, and typical RDS(on) from 53mΩ to 270mΩ. Also featuring ultra-low internal capacitances and low gate charge, inherent in GaN wide-bandgap technology, each has a Qg x RDS(on) figure of merit (FoM) significantly ahead of traditional silicon devices, it is reckoned.
Qualified to ST’s reliability standards, the 700V devices are said to broaden choices and ensure leading-edge performance and efficiency. They can drop into power conversion circuits as a replacement for MOSFETs, or enable new, higher-frequency topologies. Their capability to operate at elevated switching frequencies reduces the size of magnetics and passives, enabling a more compact power stage and higher power density.
The devices are housed in DPAK, TO-LL and PowerFLAT surface-mount packages that are proven in practice and widely supported by major electronic design automation libraries and toolchains. The TO-LL and PowerFLAT devices provide a Kelvin source connection that separates the gate-control circuit from the main power path to maximize noise immunity, protect the gate driver, and preserve timing margin. The new devices (with typical RDS(on)) are:
• SGT350R70GTK (6A, 270mΩ) in 6.10mm x 6.60mm 3-pin DPAK with solderable tab;
• SGT070R70HTO (26A, 53mΩ) in leadless TO-LL with thermally efficient drain and source connections;
• SGT080R70ILB (29A, 60mΩ), SGT105R70ILB (21.7A, 80mΩ), SGT140R70ILB (17A, 106mΩ), SGT190R70ILB (11.5A, 138mΩ), SGT240R70ILB (10A, 165mΩ) in PowerFLAT 8x8 with solderable source pad for enhanced thermal performance.
The new 700V PowerGaN transistors are in production now and available from the eSTore or through distributors, from $0.63 to $2.25 for orders of 1000 pieces.
