News: Microelectronics
14 May 2026
Guerrilla RF’s high-power GaN HEMT models now available in Modelithics COMPLETE Library
Modelithics Inc of Tampa, FL, USA, which provides RF and microwave simulation models for electronic design automation (EDA), says that new high-power gallium nitride GaN models from Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which provides radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — have been added to the Modelithics COMPLETE Library. These new nonlinear models were developed through Guerrilla RF’s collaboration with Modelithics via the Sponsoring MVP (Modelithics Vendor Partner) Program.
The first set of models are now available for the following devices with varying saturated output power (PSAT): the 15W GRF0010, 30W GRF0020, 50W GRF0030, 80W GRF0065, 110W GRF0090, and 150W GRF0135.
Models for additional power variants will continue to roll out over the course of the next few months.
The availability of these models marks the final step in commercializing Guerrilla RF’s new GaN-on-SiC HEMT product line. All the devices listed above are in production and readily available for purchase. For customers who depend on nonlinear models as a core part of their design process, these new additions are expected to significantly reduce overall development time and hence accelerate design-in activity.
“Market consolidation and competitor exits have created a real gap in high-power GaN — and Guerrilla RF exists to fill it,” says Guerrilla RF’s CEO & founder Ryan Pratt. “The surge in demand we’re seeing for drone, counter-drone and tactical radio applications requires ultra-wideband power amplifiers that perform without compromise. Our GaN-on-SiC HEMTs — spanning 5W to 150W, supporting 28V and 50V, and fully EAR99 compliant — were designed from the ground up to meet that challenge,” he adds. “Partnering with Modelithics to deliver these nonlinear models isn’t just a technical milestone — it's the final unlock that gives engineers worldwide the design confidence to commit to GRF GaN and accelerate their programs. Becoming a Modelithics Sponsoring MVP and releasing these models puts the full modeling infrastructure in engineers’ hands, so they can reduce costly prototype iterations and accelerate fielding of the systems our warfighters and commercial customers depend on.”
Modeling specifics
As part of the Sponsoring MVP collaboration, Modelithics has completed the development of six new nonlinear GaN HEMT models for Guerrilla RF devices, now available to designers worldwide within the Modelithics COMPLETE Library:
- HMT GUR GRF0010 001 — models the 15W unmatched GaN-on-SiC HEMT;
- HMT GUR GRF0020 001 — models the 30W unmatched GaN-on-SiC HEMT;
- HMT GUR GRF0030 001 — models the 50W unmatched GaN-on-SiC HEMT;
- HMT GUR GRF0065 001 — models the 80W unmatched GaN-on-SiC HEMT;
- HMT GUR GRF0090 001 — models the 110W unmatched GaN-on-SiC HEMT; and
- HMT GUR GRF0135 001 — models the 150W unmatched GaN-on-SiC HEMT.
These high-accuracy models are validated against measured broadband multi-frequency S-parameters and large-signal load-pull data, enabling designers to confidently simulate broadband RF power amplifier performance across a wide range of bias, frequency and thermal conditions.
The new models leverage the Modelithics-Enhanced Angelov nonlinear formulation and include advanced features such as scalable bias control, electro-thermal self-heating effects, and intrinsic voltage/current sensing for waveform-based RF power amplifier design. They support 28V to 50V operation and are validated over relevant RF power and frequency ranges, making them well suited for applications including aerospace & defense, infrastructure, test & measurement, and industrial RF systems. These models are part of a growing Modelithics library for Guerrilla RF products, which also includes a large list of amplifier behavioral models.
“This welcome collaborate on is producing more of the up-to-date, high-demand content we aim to support for the RF design community,” says Modelithics’ president & CEO Larry Dunleavy. “We are pleased to have Guerrilla RF expand their engagement with Modelithics through the Sponsoring MVP program and look forward to adding to the model portfolio as additional devices are released.”
The new models are available now in both Keysight Advanced Design System (ADS) and Cadence AWR Design Environment simulators and may be accessed through the Modelithics COMPLETE Library, as well as via 90-day free trial access of the entire Modelithics Guerrilla RF sub-library, including the new GaN HEMT models along with models for many other Guerilla RFpProducts.
Guerrilla RF’s GaN range
The GRF0010, GRF0020, GRF0030, GRF0065, GRF0090 and GRF0135 are part of a broader family of discrete, unmatched GaN-on-SiC HEMTs ranging from 5W to 150W. These transistor cores natively support 50V operation and are also compatible with 28V supply rails.
Device variants with PSAT≤50W are housed in industry-standard 3mm x 3mm QFN-16 packaging, while transistors with power ratings greater than 50W are housed in compact 6mm x 3mm DFN-14 packages.
All unmatched transistors in this family are EAR99 compliant, so they are not subject to US export restrictions — an advantage for global customers. Given their broadband frequency coverage and high power ratings, these HEMTs suit both commercial and aerospace & defense markets. In particular, their broadband nature makes them suitable for: tactical radios, UAS (drone) systems, and C-UAS (counter-drone) applications.
Guerrilla RF unveils new GaN-on-SiC HEMT power amplifiers dice for high-performance RF
