News: Microelectronics
27 May 2026
Microchip launches 3.3kV HV D3 mSiC power modules to enable solid-state transformers for AI data centers
Microchip Technology Inc of Chandler, AZ, USA has announced the availability of its new 3.3kV HV-D3 mSiC power modules, designed to simplify and accelerate the adoption of solid-state transformers (SSTs) in AI hyperscale data centers and other high-voltage power applications. The new modules integrate 3.3kV silicon carbide (SiC) mSiC MOSFETs and Schottky diodes in an industry-standard 62mm package, enabling efficient power delivery from the medium-voltage grid directly to the server rack.
As AI data centers continue to scale, token generation is limited by power availability, while efficiency is a defining factor for return on investment. Traditional architectures based on bulky, low-frequency transformers add complexity, increase losses and limit flexibility. Solid-state transformers represent a foundational shift in power delivery, reducing conversion stages and enabling higher system efficiency. The industry’s shift toward higher-voltage DC rack distribution in next-generation AI facilities further amplifies the value of SSTs, which are intended to deliver regulated DC directly from the medium-voltage grid with fewer conversion stages.
Microchip’s HV-D3 mSiC modules are engineered specifically to meet these requirements. The modules use Microchip’s mSiC MOSFET technology, which offers highly competitive RDS(on) stability over temperature, with packaging that supports 6kV isolation, incorporates CTI 600-rated materials and features extended creepage distances, designed to allow safe series connection for high-voltage operation. A silicon nitride (Si3N4) substrate delivers enhanced thermal conductivity and power-cycling capability, helping designers to achieve higher power density with less aggressive cooling.
“As AI data centers continue to push limits in supplying power from the grid to the GPU, the need for solid-state transformers becomes increasingly important,” says Clayton Pillion, vice president of Microchip’s high-power solutions business unit. “Our 3.3kV HV-D3 mSiC power modules enable designers to reduce the number of series-connected devices by roughly half versus lower-voltage SiC alternatives when interfacing to 13.8kV or 34.5kV grids,” he adds. “The devices also address a key gap in the industrial market for 100–300A products, bridging discrete SiC devices and much larger power modules.”
The HV-D3 mSiC power modules are available in half-bridge and common-source configurations, with and without anti-parallel Schottky diodes, addressing applications in the 100-300A range. Microchip’s mSiC MOSFET technology offers balanced switching losses for both hard-switched and soft-switched topologies, making the devices suited to SST designs and other high-frequency, high-voltage systems.
While optimized for solid-state transformers in AI data centers, the HV-D3 mSiC power modules also address a wide range of applications, including megawatt charging infrastructure for heavy-duty vehicles, auxiliary power supplies for rail/heavy transportation, medium-voltage motor drives, industrial and defense power systems. These markets benefit from the same combination of high isolation, thermal robustness, and efficient power conversion.
The 3.3kV power modules are supported by an application note, design guide, and device and simulation models for rapid prototyping. Additionally, Microchip provides global technical support, design services and field application engineering support.
The 3.3kV mSiC power modules are available to purchase in production quantities, either directly from Microchip or from a sales representative or authorized worldwide distributor.
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