News: Microelectronics
8 June 2026
GE Aerospace and Wolfspeed sign MoU to collaborate on accelerating high-voltage silicon carbide adoption
Global aerospace propulsion, services and systems firm GE Aerospace of Evendale, OH, USA and Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — have entered into a memorandum of understanding (MoU) to collaborate on accelerating the adoption of high-voltage silicon carbide across the industrial, aerospace and defense markets.
The firms plan to develop standards for high-voltage SiC-based power modules to support solid-state transformers, industrial electrification, and next-generation aerospace & defense (A&D) platforms while strengthening supply chain resilience. These higher-voltage power modules will enable systems with fewer series-connected devices and less complexity, enabling solutions that are more compact, efficient and reliable.
“Separately, our two companies have contributed to several industry-first technologies,” says Kris Shepherd, president of Electrical Power for GE Aerospace. “Together, we’re ready to shape a robust value chain of high-power silicon carbide based on a mutual appreciation for achieving smaller, reliable and more efficient high-voltage end systems,” he adds.
“As AI, electrification and defense platforms push power demands higher and timelines shorter, GE Aerospace and Wolfspeed are uniquely positioned to deliver the high-voltage silicon carbide building blocks the market needs,” reckons Wolfspeed’s CEO Robert Feurle. “By securing domestic sourcing of high-power silicon carbide modules, the two companies are jointly committed to enabling systems that improve efficiency and lower time-to-power. High-voltage silicon carbide is finally production-ready exactly as the market confronts a power-delivery crunch legacy silicon cannot solve.”
Leveraging silicon carbide, GE Aerospace recently qualified high-voltage power units for US military ground vehicles, marking them production ready. The team also successfully demonstrated their fourth generation of silicon carbide power MOSFET (metal-oxide-semiconductor-field-effect transistors) devices at the company’s Research Center in Niskayuna, NY that will improve switching speed, efficiency, and durability.
Wolfspeed claims to lead the industry in high-volume 200mm silicon carbide manufacturing and recently introduced the first commercially available 10kV SiC MOSFET — honored as a PCIM Top Innovation — giving the industrial, AI and aerospace & defense markets a production-ready path to high-voltage power.
Wolfspeed launches first commercially available 10kV SiC power MOSFET
