News: Microelectronics
8 June 2026
onsemi introduces Elite Pairing Studio to simplify pairing SiC MOSFETs and gate drivers for power electronics design
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has announced its Elite Pairing Studio, an industry-first online design tool that enables engineers to move beyond traditional component-level selection to quickly identify recommended combinations of silicon carbide (SiC) MOSFETs and gate drivers based on their specific requirements. The interactive tool makes it easier to evaluate pairing behavior and trade-offs, helping to accelerate the development of power electronics designs. It also serves as the front door to onsemi’s broader simulation toolset for system-level performance and efficiency analysis.
As power electronics grow more complex, engineers must carefully match gate drivers with switching devices to achieve optimal efficiency, minimize losses, and ensure safe operating temperatures. Early component selection decisions have a direct impact on these system-level outcomes, particularly as teams balance competing requirements. Traditionally, this process requires time-consuming manual evaluation and simulation via extensive datasheet comparisons, spreadsheet analysis, and empirical testing.
onsemi says that its Elite Pairing Studio simplifies this challenge by guiding engineers through a step-by-step process to identify the ideal combination of an onsemi gate driver and SiC MOSFET based on their requirements. Well-matched pairings can be compared quickly, helping to reduce iterations and refine power architectures earlier in the development process. This reduces design risk, shortens time to market, and helps ensure that systems perform as intended in real-world conditions.
The cloud-based environment gives engineers access to a private and secure workspace on onsemi.com, where they can use an intuitive workflow to explore device combinations based on their inputs. The tool evaluates a wide range of gate driver combinations with the selected SiC MOSFET, using transparent methods based on established industry equations and real-world performance calculations. The evaluation logic is clear and inspectable for users.
Through the Elite Pairing Studio, engineers can examine key figures of merit for each pairing, including:
- switching timings;
- gate voltage and current (V/I) waveforms;
- voltage overshoot margins relative to device ratings;
- switching energy losses, such as turn-on and turn-off energy.
These insights allow engineers to compare pairing trade-offs relevant to their application and gain early visibility into factors that influence electromagnetic interference behavior and reliability margins. Results are visualized through an interactive waveform viewer, enabling more informed pairing decisions before designs are advanced into full system-level simulation. Additional onsemi technologies will be added to the Elite Pairing Studio in the future.
By providing well-matched pairings of SiC MOSFETs and gate drivers tailored to application needs, onsemi says that its Elite Pairing Studio enables earlier design decisions with a clearer understanding of switching behavior and trade-offs. Those pairing insights can then be carried forward using Studio-generated PLECS system-level simulation models and evaluated in the onsemi Elite Power Simulator to fine-tune efficiency, thermal, and loss performance. Together, this seamless development path helps designers to translate early pairing insights into improved system-level efficiency and performance for demanding applications including AI data centers, electric vehicles, industrial systems, and electrification infrastructure.
The Elite Pairing Studio is available now through the onsemi website and is being demonstrated in the onsemi booth (Hall 9-332) at the PCIM 2026 (Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) Expo & Conference in Nuremberg, Germany (9–11 June).
