AES Semigas

Honeywell

10 June 2026

onsemi launches GaNEXUS gallium nitride power portfolio

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has launched its GaNEXUS gallium nitride (GaN) power portfolio.

The initial portfolio includes GaNEXUS FETs sampling across voltage ranges from 40V to 650V, including 650V GaNEXUS Smart, GaN FETs with integrated protection features, to simplify system integration and improve reliability.

The portfolio is engineered to deliver higher efficiency, greater power density, and improved thermal performance across power-hungry applications including AI data-center power delivery, 48V systems, robotics and industrial automation, and energy infrastructure. 

onsemi’s new GaNEXUS gallium nitride power portfolio.

Picture: onsemi’s new GaNEXUS gallium nitride power portfolio.

The addition of GaNEXUS to onsemi’s intelligent power portfolio expands the firm’s ability to deliver optimized power solutions across a range of applications, voltage domains, and performance requirements. As part of onsemi’s broader power portfolio alongside silicon and EliteSiC technologies, GaNEXUS gives customers greater flexibility to optimize performance, efficiency, thermal behavior, and total system cost across the full power delivery architecture.

As AI infrastructure, electrification, industrial automation, and energy systems continue to increase demand for more efficient and compact power architectures, designers are facing growing challenges around energy consumption, thermal management, and system size. AI data centers alone are expected to consume up to 9% of US electricity generation by 2030, with power and cooling costs accounting for up to 40% of the total data-center operating expenses.

GaNEXUS addresses these challenges by enabling faster switching speeds, lower switching losses, higher power density, and improved thermal performance compared to conventional silicon-based solutions. These advantages allow customers to reduce the size of magnetics and cooling systems while improving overall system efficiency and responsiveness and lowering system cost in applications ranging from AI data-center power delivery and electric vehicle charging to robotics and industrial power systems.

“Our GaNEXUS portfolio is enabling new architectures for power system design,” says Antoine Jalabert, vice president of onsemi’s GaN division. “As customers push for more power in less space, it gives engineers greater flexibility to overcome constraints that have limited conventional power architectures.”

GaNEXUS solutions are engineered to improve how modern power systems convert and manage energy. When paired with onsemi’s Treo Platform for integrated sensing, control, protection and power management, GaNEXUS can deliver complete system-level power solutions that are smarter, more reliable and more robust. This system-level approach helps customers to simplify design complexity, accelerate development and qualification, reduce thermal and cooling requirements, and optimize performance across the full power delivery chain.

In low- and medium-voltage systems, including AI server 48V intermediate bus converter (IBC) and battery backup units (BBU) and motor drives, GaNEXUS enables:

  • ~30–60% smaller magnetics;
  • ~1.5x–2x higher power density;
  • ~0.5–2% efficiency improvement, depending on topology;
  • reduced switching losses, improved thermal performance and control stability.

In higher-voltage applications such as AI power shelves, high-voltage DC-DC conversion, PFC, and LLC power stages, GaNEXUS enables:

  • up to ~60% reduction in magnetics size in high-frequency AC-DC and resonant stages;
  • ~1.5x–2x higher power density in PFC, LLC, and HV DC-DC architectures;
  • ~0.5–1% efficiency gains with meaningful thermal and operating-cost impact at scale;
  • lower losses reduce thermal stress in compact, high-power systems;
  • GaNEXUS Smart reduces system risk and simplifies power stage design for faster qualification and higher confidence.

GaNEXUS devices feature thermally enhanced packages with industry-standard footprints for dual sourcing, like TOLL bottom cooling, TOLT top cooling, and dual-cooling 3.3mm x 3.3mm and 5mm x 6mm packages.

See related items:

onsemi’s role in NVIDIA MGX ecosystem expanding into 800VDC power architectures

Tags: onsemi

Visit: www.onsemi.com/solutions/technology/gallium-nitride-gan

RSS

Microelectronics UK

Book This Space