News: Suppliers
10 June 2026
ROHM partners with Aixtron to establish in-house GaN epi
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has announced a strategic production partnership with ROHM Semiconductor, which has selected Aixtron’s G10-GaN metal-organic chemical vapor deposition (MOCVD) system to establish in-house gallium nitride (GaN) epitaxy at its Hamamatsu plant in Japan. The system is currently ramping for volume production of 8-inch GaN epitaxial wafers for 650V and 100V power device platforms.
ROHM’s EcoGaN product family – including 650V GaN HEMTs for server power supplies, onboard chargers, and DC-DC converters – addresses high-growth applications in AI data-center infrastructure and electric vehicle (EV) power-trains. ROHM’s 100V product line targets growing demand for high-efficiency voltage regulation modules (VRMs) used in AI accelerators and GPU-based computing platforms, where power density, efficiency and thermal management are key requirements.
Until now, ROHM relied on external foundry manufacturing for its 650V GaN devices. By bringing GaN epitaxy in-house, ROHM is taking a step toward greater control over a critical part of the device manufacturing process. The installation of Aixtron’s G10-GaN system at the Hamamatsu plant supports ROHM’s transition toward increased vertical integration and strengthens its ability to scale production for next-generation power semiconductor applications.
“Aixtron’s G10-GaN system represents the ideal combination of proven technology, scalability, and partnership approach that ROHM requires to lead in GaN power devices,” comments ROHM Semiconductor’s executive officer Yasushi Hamazawa. “In addition to possessing world-leading epitaxial growth technology and pursuing continuous development, Aixtron actively engages with us on process optimization and long-term roadmap alignment. This collaboration will be instrumental in strengthening our product competitiveness and meeting the increasingly demanding performance requirements of AI and automotive customers,” he adds.
“ROHM’s decision to insource GaN epitaxy on our G10-GaN platform reflects a pivotal shift in how leading device manufacturers are securing their compound semiconductor supply chains,” says Aixtron’s CEO Dr Felix Grawert. “Our partnership with ROHM combines Aixtron’s process expertise with ROHM’s proven device technology – together, we are accelerating the mainstream adoption of GaN power electronics.”
The collaboration between Aixtron and ROHM extends beyond the supply of production equipment. Both firms are working closely on process optimization and long-term technology roadmap alignment. Aixtron’s G10-GaN platform – its production-proven system for high-volume GaN-on-silicon epitaxy – delivers the uniformity, throughput and process control required for manufacturing GaN devices with high breakdown voltage, low on-resistance, and excellent thermal stability.
With in-house GaN epitaxy, ROHM gains greater control over wafer quality, device performance, and production scheduling. This strengthens the firm’s ability to respond to customer requirements in the fast-moving AI and automotive power electronics markets and positions ROHM for the long term in a GaN power device market projected to reach about US$3bn by 2030.
ROHM licenses TSMC’s GaN processs technology for Hamamatsu fab
Aixtron launches G10-GaN MOCVD platform for power and RF devices
