News: Microelectronics
6 January 2026
Cambridge GaN Devices appoints Fabio Necco as new CEO
Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — has appointed Fabio Necco as chief executive officer. The move is designed to drive forward CGD’s entry into key markets.
Necco takes over as CEO from CGD co-founder Giorgia Longobardi. “I am delighted to welcome Fabio to CGD and hand over the day-to-day leadership of the company while I channel my energy into my passion for bringing advanced, sustainable and energy-efficient power electronics solutions to market,” says Longobardi. “Fabio is the right person with the right skill set to take CGD into its next growth phase, and I shall do all I can to support his initiatives as I transition into my new role as CMO [chief marketing officer].”
Longobardi will also continue to serve as a director on CGD’s board and on the advisory board of the International Semiconductor Industry Group (I.S.I.G.).
Necco comes to CGD from intelligent power and sensing semiconductor technology provider onsemi of Scottsdale, AZ, USA, where he was VP & division general manager with more than 25 years’ experience in power electronics, application engineering, vehicle electrification, and data centers, all primary market focus points of CGD.
Picture: CGD co-founder and now chief marketing officer Giorgia Longobardi (left) with new CEO Fabio Necco (right).
“I have known CGD and Giorgia for years and have long been impressed with its success under her leadership,” comments Necco. “I am very excited about CGD’s unique technology and to have been chosen to lead our entire team to the next stages of product development as well as substantially increasing our presence in key markets.”
CGD says that its energy-efficient GaN devices enable power electronic designers to develop sustainable, energy-efficient systems. These inherent benefits, coupled with the flexibility of the proven fabless model, make CGD believe that it is uniquely positioned to exploit rapidly growing markets, which can already be seen in the exponential demand for GaN technology.
Unlike many other GaN solutions, CGD's ICeGaN technology uses a monolithic, single-chip approach that integrates all necessary components onto a single die, which substantially improves efficiency and performance.
That monolithic design means that CGD delivers compact, engineer-led GaN power devices that combine next-generation design and innovation, making it suitable for the market-specific requirements of Traction/Aux inverters for electric vehicle (EV) and industrial power conversion solutions. The company’s focus on bare die, ease of use, robust gate, and parallel operation makes it suitable for a wide range of power applications.
CGD partners with GlobalFoundries to supply single-chip ICeGaN power devices
