News: LEDs
19 January 2026
ALLOS and Ennostar partner on 200mm GaN-on-Si LED epiwafers for micro-LED volume production
ALLOS Semiconductors GmbH of Dresden, Germany — which provides 200mm and 300mm gallium nitride on silicon (GaN-on-Si) epiwafers focused on micro-LED applications, as well as licensing IP and transferring the technology — and Ennostar Corp of Hsinchu, Taiwan (a provider of integrated optoelectronic solutions, specializing in R&D and manufacturing III-V materials) have announced a strategic partnership to bring 200mm GaN-on-Si LED epiwafers for micro-LED applications into volume production. The collaboration is said to represent a milestone in establishing a silicon fab-compatible supply chain for micro-LED products.
ALLOS will hence be able to deliver its GaN-on-Si epiwafers at the volumes required by its customers, supporting their transition into micro-LED volume production. Ennostar takes on the role of ALLOS’ manufacturing partner for 200mm GaN-on-Si LED epiwafers. With what is claimed to be one of the world’s largest LED manufacturing infrastructures and expertise in high-end LED technologies (including micro-LEDs), Ennostar is reckoned to be uniquely positioned for the partnership. In addition to manufacturing, Ennostar will also contribute its LED-related technologies to further enhance product performance.
“With Ennostar we work with the best possible partner to provide our customers with a high-quality and scalable supply of epiwafers,” says ALLOS’ co-founder & CEO Burkhard Slischka. “Together we can offer the industry’s best combination of highest LED efficiency and superior on-wafer and wafer-to-wafer yields for micro-LED chip manufacturing,” he adds.
“This partnership delivers competitive GaN-on-Si micro-LED solutions and provides a scalable production pathway compatible with standard silicon foundry processes,” says Ennostar’s president Dr Terry Tang. “By partnering with ALLOS, we can now address the 200mm GaN-on-Si LED epiwafer segment alongside our existing market-leading micro-LED solutions, offering a uniquely comprehensive value proposition to the rapidly evolving micro-LED industry.”
ALLOS says that its epiwafer products are engineered to meet the stringent requirements of micro-LED applications, including uniformity, elimination of micro-defects, and optimized driving currents. Designed for compatibility with standard silicon fabs, the epiwafers are available with a thickness of 725µm and conform to silicon industry cleanliness and contamination standards.
By combining ALLOS’ proprietary buffer and n-GaN layers with Ennostar’s LED layer technologies, the resulting GaN-on-Si LED epiwafers are claimed to deliver brightness and energy efficiency on a par with conventional GaN-on-sapphire solutions.
“We share our customers’ vision that using standard silicon fabs for micro-LED manufacturing will unlock the yield and cost efficiencies needed to make mass production of micro-LEDs economically viable,” says Slischka on ALLOS’ business strategy. “Through our partnership with Ennostar, we can now quickly scale up epiwafer production with increasing demand for micro-LED products.”
The partnership also paves the way for 300mm GaN-on-Si LED epiwafers, enabling efficient integration with 300mm logic wafers – essential, for example, to enable ultra-fast and energy-efficient optical interconnects between AI processors and memory chips using micro-LED light sources. ALLOS has already demonstrated 300mm capability since 2020 and continues to refine the technology with lead customers.
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