News: Microelectronics
9 February 2026
Infineon’s silicon carbide power MOSFETs selected for Toyota’s new bZ4X model
Infineon Technologies AG of Munich, Germany says that CoolSiC silicon carbide power MOSFETs have been adopted in the new bZ4X model of the world’s largest automaker, Toyota of Tokyo, Japan. Integrated into the on-board charger (OBC) and DC/DC converter, the SiC MOSFETs leverage the material’s advantages of low losses, high thermal resistance and high-voltage capability to help extend driving range and reduce charging time.
“Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility,” says Peter Schaefer, executive VP & chief sales officer Automotive at Infineon. “With our dedication and our commitment to innovation and zero-defect quality, we are well positioned to meet the growing demand for power electronics in electromobility,” he reckons.
Infineon’s CoolSiC MOSFETs feature a unique trench gate structure that reduces normalized on-resistance and chip size, enabling reductions in both conduction and switching losses to contribute to higher efficiency in automotive power systems. In addition, optimized parasitic capacitance and gate threshold voltage enable unipolar gate drive, contributing to the simplification of drive circuits for automotive electric drive-train and supporting high-density, high-reliability design for OBC and DC/DC converters.
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