News: Microelectronics
4 February 2026
EPC launches its first seventh-generation eGaN power transistor
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has started volume production of the EPC2366, the first of its seventh-generation (Gen 7) eGaN family of power transistors.
The EPC2366 is claimed to deliver up to 3x better performance than equivalent silicon MOSFETs. With a typical on-ressistance (RDS(on)) of 0.8mΩ and a highly optimized RDS(on) x QG figure of merit (FoM) < 12mΩ*nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device is said to excel in synchronous rectification, high-density DC–DC conversion, AI server power supplies, and advanced motor drives.
The EPC2366 supports drain-to-source voltages up to 40V and transient voltages up to 48V, with continuous drain currents up to 88A and pulsed currents of 360A, making it suitable for the most demanding power systems.
The device is thermally optimized for high power density due to its small 3.3mm x 2.6mm PQFN package with a thermal resistance from the junction to the case of 0.6°C/W.
“The 40V, EPC2366 is the first of this family to enter mass production,” notes CEO & co-founder Alex Lidow. “However, EPC is sampling seventh-generation 25V and 15V transistors now and expects more mass-production transitions in the first half of 2026.”
To accelerate design-in and evaluation, EPC also offers the EPC90167 half-bridge evaluation board, which integrates two EPC2366 transistors in a low-parasitic layout with support for standard PWM drive signals and flexible input modes, providing engineers with a reference platform to assess performance in real-world applications.
The EPC2366 is now in volume production and available for ordering through EPC’s global distribution channels and direct sales, enabling customers to scale designs for data-center power supplies, synchronous rectification stages, motor drives, and other high-density power conversion use-cases.
The EPC2366 eGaN FET is priced at $1.56 each at 3000 units per reel. The EPC90167 development board is priced at $211.65/each.
Both the EPC2366 and EPC90167 demonstration board are available for immediate delivery from distributor Digi-Key Corp.
