News: Microelectronics
21 April 2026
ROHM develops 5th generation SiC MOSFETs
Power semiconductor maker ROHM Semiconductor of Kyoto, Japan has developed the latest device of its EcoSiC series: the 5th Generation silicon carbide (SiC) MOSFETs optimized for high-efficiency power applications. The technology is suitable for automotive electric powertrain systems – such as traction inverters for electric vehicles (xEVs) – as well as power supplies for AI servers and industrial equipment such as data centers.
In recent years, the rapid proliferation of generative AI and big data processing has accelerated the deployment of high-performance servers in the industrial equipment sector. The resulting surge in power density is placing a greater strain on power infrastructure, raising concerns about localized supply shortages. While smart grids that combine renewable energy sources (i.e. solar power) with existing power supply networks are emerging as a possible solution, minimizing losses during energy conversion and storage remains a key challenge.
In the automotive sector, next-generation electric vehicles require extended cruising range and faster charging, creating demand for lower-loss inverters and higher-performance onboard chargers (OBCs). Against this backdrop, the adoption of SiC devices capable of both low loss and high efficiency is increasing in high-power applications ranging from a few kilowatts to hundreds of kilowatts.
ROHM says that, in 2010, it was the first company to begin mass production of SiC MOSFETs, contributing to reducing energy losses by implementing SiC devices over a wide range of high-power applications, including offering an early lineup of products compliant with automotive reliability standards such as AEC-Q101. Furthermore, the 4th generation SiC MOSFETs, for which sample provision began in June 2020, have been adopted globally in automotive and industrial applications. They are available across a broad product portfolio, including both discrete devices and modules, supporting the rapid market adoption of SiC technology.
The new 5th Generation SiC MOSFETs achieve what is claimed to be industry-leading low loss, driving the broader adoption of SiC technology. Through structural enhancements and manufacturing process optimization, ON-resistance is reduced by about 30% during high-temperature operation (Tj=175°C) compared to conventional 4th Generation products (under the same breakdown voltage and chip-size conditions). This improvement contributes to making units smaller while increasing output power in high-temperature applications such as traction inverters for xEVs.
ROHM began supporting the bare dies business with 5th Generation SiC MOSFETs in 2025 and completed development in March. Furthermore, starting from July, ROHM will provide samples of discrete devices and modules incorporating 5th Generation SiC MOSFETs.
Going forward, ROHM plans to expand its 5th Generation SiC MOSFET lineup with additional breakdown voltage and package options. The firm says it will also continue to enhance its design tools and strengthen application support.
