News: Microelectronics
21 April 2026
Quinas advances ULTRARAM development with atomic-scale processing at KAUST Core Labs
Quinas Technology Ltd of London, UK (which was spun off from Lancaster University in early 2023, and is developing ULTRARAM non-volatile memory technology) has announced a milestone in its R&D program, confirming the use of atomic layer etching (ALE) to fabricate and refine its quantum-engineered device structures at Saudi Arabia’s King Abdullah University of Science and Technology (KAUST) Core Labs (a system of multi-disciplinary and interconnected research laboratories).
The work builds on more than a decade of foundational quantum device research conducted at Lancaster University, with advanced atomic-scale processing now being carried out at KAUST Core Labs using the ALE technology of UK-based Oxford Instruments Plasma Technology (OIPT). This combination provides sub-nanometer control with ultra-low-damage processing, a critical requirement for the precisely engineered quantum well heterostructures that underpin ULTRARAM.
ULTRARAM memory technology combines DRAM-class speed with non-volatile data retention, offering the potential for significant improvements in energy efficiency and system performance. Achieving this requires exceptional control of interfaces and layer thickness within complex III–V semiconductor structures, making atomic-scale fabrication techniques ideal.
“Atomic-scale control of our quantum well structures is fundamental to ULTRARAM,” says Quinas’ CEO & co-founder James Ashforth-Pook. “Working with KAUST Core Labs and leveraging Oxford Instruments’ atomic layer etching technology gives us access to one of the world’s most advanced and credible environments for low-damage semiconductor R&D.”
KAUST Core Labs conducts advanced nanofabrication, plasma processing, and compound semiconductor research, supporting both academia and industrial technology development.
“KAUST Core Labs support cutting-edge semiconductor research through advanced nanofabrication facilities and atomic-scale processing tools designed for low-damage device development,” says Dr Kenneth Kennedy, director of the KAUST Nanofabrication Core Lab.
“Atomic layer etching enables precise, low-damage fabrication of nanoscale device features and is increasingly used in advanced semiconductor research and production environments worldwide,” says Harriet van der Vliet, head of strategic R&D markets, OIPT. “KAUST is a long-time customer of Plasma Technology with a suite of ALE and atomic layer deposition (ALD) systems including the latest in ALD technology, the PlasmaPro ASP.”
Quinas says that the milestone reflects its growing engagement with Saudi Arabia’s advanced research ecosystem as part of its global R&D strategy and strengthens the company’s position as it progresses ULTRARAM towards prototype demonstration and future engagement with industrial partners, foundries, and strategic investors
Quinas completes Innovate UK project advancing ULTRARAM for AI and neuromorphic computing
QuInAs links device physics to AI system performance using ULTRARAM
IQE and Quinas complete Innovate UK-funded £1.1m ULTRARAM industrialization project
OIPT to supply KAUST with hardware upgrades and ALE systems, complementing ALD
