News: Microelectronics
4 September 2025
VisIC unveils Gen 2 D3GaN 650V power devices
After the introduction of its first-generation (Gen 1) D3GaN 650V devices, followed by Gen 1+, and now second-generation (Gen 2) products, VisIC Technologies Ltd of Ness Ziona, Israel – a fabless supplier of power conversion devices based on gallium nitride (GaN) transistors – says that it has created a roadmap for achieving maximum energy efficiency through optimized RDS(ON) performance.
Gen 1 – proven efficiency
VisIC says that its Gen 1 devices established the foundation for GaN adoption in automotive and industrial applications. With RDS(ON) values ranging from 22mΩ to 8mΩ, Gen 1 products delivered significant switching speed and efficiency over silicon-based solutions. These devices proved the potential of GaN for compact, high-power systems and were the first step toward mass-market adoption.
Gen 1+ – optimized performance
To meet growing market demands for higher efficiency, VisIC introduced Gen 1+ devices. By reducing RDS(ON) to as little as 6mΩ, the 650V Gen 1+ improved conduction losses without compromising switching energy and enabled more power-dense, reliable designs. This generation bridged the gap between the early adoption of GaN and the high-volume needs of automotive OEMs, offering engineers an enhanced balance of efficiency, scalability and manufacturability. With 98mm.sq., the GaN bare dice V06DI065R1X13 is one of the biggest dies in the industry to deliver at 650V a current of 170A per device and which makes it suitable to be paralleled inside power modules and deliver power from 50kW to 150kW.
Beyond automotive, such performance directly addresses the surging demand for efficient power delivery in AI-driven data centers, where massive computing loads require compact, high-efficiency solutions. As a standalone GaN die, it provides the power density needed to meet the energy thirst of modern, AI-populated data centers while reducing losses and optimizing thermal performance.
Gen 2 – next-level efficiency
VisIC’s 650V Gen 2 devices represent a 33% shrink of die size compared with Gen 1+ and 50% compared with Gen 1 and is a major leap forward in performance, the firm notes. With RDS(ON) values as low as 4mΩ, Gen 2 delivers what is claimed to be unprecedented conduction efficiency, minimizing power losses and reducing system thermal stress. These D3GaN devices are engineered for next-generation electric vehicles (EV) inverters, on-board chargers, and high-performance power converters, enabling auto-makers to achieve higher driving ranges, smaller cooling systems, and overall lower system costs. The new high-power bare dice V04DI065R2X21 650V/4mΩ can be soldered or sintered on AMB/DBC substrates to increase reliability and performance. With a current capability of 230A, the device can be used to increase power density in power modules for EV drive-train inverters.
Efficiency by design
Lower RDS(ON) directly translates to higher system efficiency and reduced energy losses. Across its product roadmap, VisIC says that each generation of D³GaN devices provides measurable benefits in performance, power density and total cost of ownership. Both products are available now as bare dice for customer evaluation.
Single-chip top-side-cooled TC packages will be available before the end of 2025. Also, VisIC is working on a half-bridge power module with parallel dice, which will come soon.
“From our first-generation devices to our latest Gen 2 GaN, VisIC has consistently focused on one clear goal: enabling the most efficient power electronics for electric vehicles and industrial applications,” says CEO Tamara Baksht. “By reducing RDS(ON) with each new generation, we help our customers design systems that are not only more efficient but also more compact and cost-effective.”
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