News: Microelectronics
14 October 2025
Power Integrations details 1250V and 1700V PowiGaN technology for 800VDC AI data centers
Power Integrations Inc of San Jose, CA, USA (which provides high-voltage integrated circuits for energy-efficient power conversion) has outlined the benefits of its PowiGaN gallium nitride technology for next-generation AI data centers. The capabilities of 1250V and 1700V PowiGaN technology for 800VDC power architectures are explained in a new white paper from Power Integrations, published at the 2025 OCP Global Summit in San Jose, where NVIDIA provided an update on the 800VDC architecture. Power Integrations is collaborating with NVIDIA to accelerate the transition to 800VDC power and megawatt-scale racks.
The new white paper details the performance advantages of Power Integrations’ 1250V PowiGaN HEMTs, illustrating their field-proven reliability and their ability to meet the power density and efficiency requirements (>98%) of the 800VDC architecture. Further, the paper demonstrates that a single 1250V PowiGaN switch delivers greater power density and efficiency compared to stacked 650V GaN FETs and competing 1200V silicon carbide (SiC) devices.
The white paper also highlights Power Integrations’ InnoMux2-EP ICs as a solution for auxiliary power supplies in 800VDC data centers. The InnoMux-2 device’s integrated 1700V PowiGaN switch supports 1000VDC input voltage, while its SR ZVS operation provides greater than 90.3% of 12V system efficiency in a liquid-cooled, fan-less 800VDC architecture.
“With rising AI power demands, moving to an 800VDC input simplifies rack design, makes more efficient use of space and reduces copper usage,” says Roland Saint-Pierre, VP of product development. “With rising rack power demands, we see 1250V and 1700V PowiGaN devices as ideal choices for main and auxiliary power supplies, delivering the efficiency, reliability and power density required in 800VDC data centers.”
Power Integrations adds wide-creepage switcher IC for 800V automotive applications
