AES Semigas

Honeywell

28 November 2025

Infineon’s CoolGaN technology used in Anker’s new-generation 160W prime charger

Infineon Technologies AG of Munich, Germany has expanded its collaboration with Anker Innovations of Changsha, Hunan, China (a manufacturer of fast-charging power devices) to develop a new generation of high-speed chargers that can deliver up to 160W of power in a compact, pocket-size format. The result of the cooperation is said to be redefining industry standards for high power density and efficiency, represented by the launch of Anker’s 160W Prime Charger. The device features Infineon’s latest XDP digital controller and gallium nitride (GaN)-based CoolGaN transistor technology, enabling a credit-card-size design, which makes the charger suitable for travelers and professionals alike.

Anker’s 160W 3-port-charger A2687. Picture: Anker’s 160W 3-port-charger A2687.

“The key to unlocking the full potential of Anker’s charger technology lies in a full systems approach,” believes Johannes Schoiswohl, head of GaN Business Line at Infineon. “By designing and optimizing the entire system, including the GaN devices, drivers and control units, we achieve unprecedented levels of efficiency, power density, and reliability in the chargers. Together with Anker, we strive to deliver high-performance, compact, and energy-efficient charging solutions that meet the demanding requirements of today’s mobile devices.”

Infineon’s digital control technology ensures precise energy management, while GaN-based components excel in high-frequency and high-efficiency power conversion. By integrating power factor correction (PFC) and hybrid-flyback control (HFB) stages to minimize the size while improving the overall performance, the Infineon XDP XDPS2221E hybrid-flyback digital combo controller enhances the energy efficiency of the charger, delivering high power density without sacrificing reliability. The technology allows up to 140W power supply from any of the three USB-C single ports and allocating 160W intelligently across three devices. Other key components include the CoolGaN Drive 700V G5 with integrated driver and the CoolGaN Transistor Dual 650V G5, which integrates two GaN transistors in a single package, reducing board space and optimizing layout.

By leveraging high-efficiency design, high-frequency switching, soft-switch control, and digital combination control technology, along with multiple patented innovations, Infineon has optimized the overall system performance of the Anker Prime Charger. This has enabled the delivery of higher-output capability within the same volume, while also reducing the number of peripheral components and lowering bill-of-material (BOM) costs.

The collaboration is strengthened by the Innovation Application Center in Shenzhen established jointly by Infineon and Anker in early 2024. The center serves as a hub for developing more energy-efficient and CO2-saving charging solutions, supporting decarbonization and driving innovation in the fast-charging sector.

At the Consumer Electronics Show (CES 2026) in Las Vegas (6–9 January), Infineon is showcasing its latest innovations, including the new 160W Prime Charger, at The Venetian Resort Hotel, with demos in the Venetian Tower Guest Suites 29-139.

See related items:

Infineon and Anker open joint Innovation Application Center in Shenzhen

Anker partners with Infineon, Navitas, Innoscience and Southchip to develop all-GaN fast chargers

Tags: Infineon GaN HEMT

Visit: www.ces.tech

Visit: www.anker.com

Visit: www.infineon.com

RSS

Microelectronics UK

Book This Space