News: Microelectronics
7 May 2025
EPC makes available engineering samples of 40V GaN power transistor
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has announced availability of the EPC2366, a 40V, 0.8mΩ device designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC–DC converters and synchronous rectifiers. Engineering samples are available for qualified designs.
With what is claimed to be industry-leading RDS(on) x QG figure of merit (10mΩ nC), zero reverse recovery, and excellent thermal performance, the EPC2366 delivers higher efficiency, faster switching, and greater power density in a compact 3.3mm x 2.6mm PQFN package. The EPC2366 enables higher-frequency operation and reduced system size for high-density 48V converters in AI servers and datacom, high-frequency synchronous rectifiers, and 24V battery-powered motor drives.
“With the EPC2366, and upcoming lower-voltage parts, we are expanding the GaN beachhead across low-voltage applications that have long been dominated by silicon,” says CEO & co-founder Alex Lidow.
