News: Microelectronics
4 June 2025
WIN launches linearity optimized 0.12µm GaN power process
WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets — has launched its NP12-1B, a 0.12μm gate-length depletion-mode (D-mode) GaN high-electron-mobility transistor (HEMT) technology on silicon carbide (SiC) substrates.
Engineered for demanding high-power applications across K-band to V-band frequencies, NP12-1B delivers what is claimed to be industry-leading high-power front-end solutions with exceptional linearity, ruggedness and reliability for next-generation RF and microwave systems.
For high-linearity amplifiers, NP12-1B is designed to meet the rigorous requirements for high-power RF applications including high-power microwave and millimeter-wave communication systems, radar systems (including airborne, shipborne, and ground-based), electronic warfare and avionics, wireless infrastructure, ultra-wideband and broadband systems, and test & measurement equipment. The demand for high linearity to minimize signal distortion and intermodulation is critical for maintaining signal integrity in densely packed spectral environments.
NP12-1B incorporates multiple transistor improvements, providing a combination of high breakdown voltage, enhanced linearity, and robust operation in continuous wave (CW) high-compression scenarios. The technology’s source-coupled field-plate design ensures a typical gate-to-drain breakdown voltage of 120V, supporting high power density and system reliability. NP12-1B is available with the Enhanced Moisture Ruggedness option, which provides excellent humidity resistance for use in plastic packaging.
NP12-1B is supported by a complete process design kit featuring both large-signal and small-signal models, expediting the development of high-performance RF circuits. A comprehensive qualification report is available upon request.
The NP12-1B will be available for high-volume production in third-quarter 2025.
WIN is exhibiting in booth# 559 at the IEEE MTT-S International Microwave Symposium (IMS 2025) in Moscone Center, San Francisco, CA, USA (15–20 June).
WIN announces beta release of NP12-0B mmWave RF GaN-on-SiC technology
