News: Microelectronics
23 June 2025
Tagore launches compact, high-power RF receiver front-end module
Chicago-based fabless firm Tagore Technology Inc — which was founded in 2011 and has design centers in Arlington Heights, IL, USA and Kolkata, India developing gallium nitride-on-silicon (GaN-on-Si) technology for RF and power management applications — has launched the TSL8028N, a compact, high-performance receiver front-end module tailored for demanding wireless infrastructure and radar applications operating in the 2–5GHz frequency range.
The TSL8028N is a single-channel integrated RF front-end module that combines a two-stage gallium arsenide (GaAs) low-noise amplifier (LNA) with a robust GaN SPDT (single-pole, double-throw) switch, delivering what is claimed to be best-in-class performance in a small 5mm x 5mm QFN package. With on-chip biasing and matching, it simplifies design and reduces component count for 4G/5G infrastructure, macro base stations, small cells, SDARS, and cellular repeaters.
Key features include:
- High-gain mode: 33dB gain, 1.2dB total noise figure, and OIP3 of 32dBm (typical. at 3.6GHz);
- Low-gain mode: 14dB gain with just 50mA current draw;
- TX mode: exceptionally low 0.3dB insertion loss and support for 50dBm LTE average power;
- Excellent isolation : over 45dB RX-TX isolation in TX mode;
- Fast switching: mode transitions in under 2µs;
- Power efficient: draws only 4mA in power-down mode.
Tagore says that the TSL8028N delivers the performance, efficiency and ruggedness required for modern RF front ends, including high linearity, low-noise reception, and high-power handling. Designed to operate reliably up to 105°C case temperature, the module supports full lifetime operation under LTE and 5G TDD average power conditions.
“With the TSL8028N, we are empowering system designers to meet increasing RF performance demands in a compact, energy-efficient format,” says CEO & president Paul Hart. “Its GaN/GaAs integration delivers a unique blend of low noise, high gain, and robust switching in a small footprint—ideal for today’s high-density RF systems.”
The product is offered in a 32-lead QFN package and is now available for sampling.
GlobalFoundries acquires Tagore’s GaN IP portfolio
Tagore launches high-power GaN SPDTs for broadband switching
