News: Microelectronics
23 June 2025
ROHM’s SiC MOSFET adopted for mass production in Toyota’s new BEV for Chinese market
The power module equipped with Japan-based ROHM Co Ltd’s fourth-generation silicon carbide (SiC) MOSFET bare chip has been adopted in the traction inverter of Toyota Motor Corp’s new bZ5 crossover-type battery electric vehicle (BEV) for the Chinese market.
The bZ5 has been jointly developed by Toyota, BYD Toyota EV Technology Co Ltd (BTET) and FAW Toyota Motor Co Ltd, and was launched by FAW Toyota in June.
The power module adopted this time has started mass-production shipments from HAIMOSIC (Shanghai) Co Ltd — a joint venture between ROHM and Zhenghai Group Co Ltd (China) that is mainly engaged in the R&D, design and manufacturing of SiC power modules — with estimated annual capacity of 360,000 units/year. ROHM’s power solutions, centered on SiC MOSFETs, contribute to the extended range and enhanced performance of the new BEV.
ROHM aims to complete the construction of the production line for the next-generation its fifth generation SiC MOSFETs by 2025, and is also accelerating market introduction plans for the sixth and seventh generations, focusing on the development of SiC power devices. The firm will continue to work on improving device performance and production efficiency, and strengthen the system to provide SiC in various forms such as bare chips, discrete components, and modules.
ROHM adds high-power-density 4-in-1 and 6-in-1 SiC power modules in HSDIP20 package
ROHM’s fourth-generation SiC MOSFET chips adopted in three Geely ZEEKR EV models
