News: Microelectronics
4 June 2025
Navitas and BrightLoop partners on next-gen hydrogen fuel-cell charging
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has partnered with BrightLoop Converters of Paris, France (which develops and manufactures high-efficiency, high-reliability power converters) to support their latest series of hydrogen fuel-cell chargers with automotive-qualified Gen 3 ‘Fast’ SiC (G3F) MOSFETs for heavy-duty agricultural transportation equipment.
“Both companies provide the technology and system leadership to enable the roadmap for next-generation, high-power-density, high-reliability converter solutions,” says Navitas’ CEO & co-founder Gene Sheridan.
BrightLoop offers power conversion efficiencies of over 98% and power densities up to 35kW/kg and 60kW/L. Their high-voltage, high-power multi-verters, paired to BrightLoop’s Power Flow Processor technology, are designed to deliver exceptional performance in both AC and DC applications, such as energy management scenarios for fuel cells and heavy-duty applications, as well as high-voltage HV network adaptation.
Navitas’ auto-qualified G3F SiC MOSFETs are incorporated into BrightLoop’s 250kW HV-DC/DC converter, with an output of 950VDC at 480A, and can be paralleled to achieve megawatt power capability.
Enabled by 20 years of SiC innovation, GeneSiC proprietary ‘trench-assisted planar’ technology provides what is said to be world-leading performance over temperature, delivering high-speed, cool-running operation for high-power, high-reliability applications. G3F SiC MOSFETs deliver high efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors, it is claimed.
Trench-assisted planar technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared with the competition. All GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling.
“Navitas offers leading-edge SiC technology where efficiency, ruggedness and reliability are paramount,” comments BrightLoop’s CEO & founder Florent Liffran. “Our high-power-density, smart, efficient and scalable multi-verters lead the industry by enhancing the quantity and quality of energy delivered to our customers.”
Navitas Gen-3 Fast SiC MOSFETs in D2PAK-7L and TOLL surface-mount packages
