News: Microelectronics
12 June 2025
Mitsubishi Electric unveils compact GaN power amplifier module with record-breaking power efficiency
Tokyo-based Mitsubishi Electric Corporation says it has developed a compact 7GHz band gallium nitride (GaN) power amplifier module (PAM) with record-breaking power efficiency of 41%. The performance was verified in a demonstration using 5G-Advanced communication signals.
According to the firm, the new PAM will make installation easier and enhance the power efficiency of 5G-Advanced base stations, thereby supporting the transition to 6G.
The PAM was developed using proprietary matching-circuit technology and high-performance GaN transistors. Thanks to high-density component mounting, the prototype module measures just 12.0mm × 8.0mm.
Technical details will be presented at the IEEE International Microwave Symposium 2025, which takes place on June 15–20 in San Francisco, CA, USA. In addition, a joint live demonstration with Wupatec will be conducted at the event’s exhibition venue.
