News: Microelectronics
25 June 2025
EPC Space launches 300V rad-hard GaN FET
EPC Space LLC of Haverhill, MA, USA (which provides high-reliability radiation-hardened enhancement-mode gallium nitride-on-silicon transistors and ICs for power management in space and other harsh environments) has launched the EPC7030MSH, a rad-hard (RH) 300V GaN FET that delivers what is claimed to be unmatched performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems.
As satellite platforms require higher-voltage buses to support growing power demands and advanced solar array technologies, the EPC7030MSH addresses a critical need for efficient, compact, and robust front-end power conversion, says the firm.
With the lowest RDS(on) and gate charge in its class, the EPC7030MSH delivers the highest-power current rating among all 300V rad-hard GaN FETs currently on the market, it is claimed. This makes it suitable for front-end DC-DC converters that must operate under stringent thermal and radiation constraints.
“The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our customers,” says CEO Bel Lazar.
Key features include:
- rated for 300V operation at LET (linear energy transfer) = 63MeV, and 250V at LET = 84.6MeV;
- lowest RDS(on) and QG of any 300V rad-hard GaN FET;
- highest current rating in its voltage class;
- FSMD-M hermetic surface-mount package optimized for conduction cooling and increased creepage distance;
- compatible with existing GaN gate drivers.
Target applications include:
- front-end DC-DC converters in satellite power systems;
- power conversion for higher-voltage distribution buses;
- electric propulsion platforms requiring compact, high-performance switching.
The EPC7030MSH is part of EPC Space’s ongoing mission to deliver space-grade radiation-hardened GaN solutions that outperform silicon rad-hard MOSFETs in efficiency, size and thermal management—enabling more capable, reliable and scalable satellite systems.
For 500-unit quantities, engineering models are priced at $236, and rad-hard space-qualified are priced at $349.
EPC Space unveils dynamic cross-reference tool for rad-hard MOSFET device replacement
EPC Space launches 40V rad-hard GaN FETs with low on-resistance and gate charge
