News: Microelectronics
21 July 2025
Renesas adds 650V GaN FETs for high-density power conversion
Renesas Electronics Corp of Tokyo, Japan has introduced three new high-voltage 650V gallium nitride (GaN) FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters.
Designed for multi-kilowatt-class applications, these fourth-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.
The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN platform, a field-proven depletion-mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer what is claimed to be superior efficiency over silicon, silicon carbide (SiC) and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with existing enhancement-mode (e-mode) GaN devices.
Fabricated on a die that is 14% smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30mΩ, reducing on-resistance by 14% and delivering a 20% improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices suitable for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical, says Renesas. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.
Available in compact TOLT, TO-247 and TOLL packages, they are claimed to provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom-side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides higher thermal capability to achieve higher power.
“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” notes Primit Parikh, VP of the GaN business division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions,” he adds. “Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”
D-mode normally-off design for reliability and easy integration
Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low-loss, high-efficiency switching benefits of the high-voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers, the firm says.
GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion, notes Renesas. Compared with SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints, the firm adds.
Renesas claims that it is uniquely positioned in the GaN market due to solutions offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower-power devices. A diverse portfolio enables it to serve a broader range of applications and customer needs, the firm adds. To date, Renesas has shipped more than 20 million GaN devices for high- and low-power applications, representing more than 300bn hours of field usage.
The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS are available now, along with the 4.2kW totem-pole PFC GaN Evaluation Platform (RTDTTP4200W066A-KIT).
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