News: Microelectronics
15 July 2025
ETRI-Wavice project localizes core GaN components for AESA radar and SAR satellite
In collaboration with Gyeonggi-based Wavice Inc, South Korea’s Electronics and Telecommunications Research Institute (ETRI) has developed localization technology for gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) used in transmit/receive modules for military radars and satellites for the first time in Korea using fab-based technology. This is expected to significantly contribute to defense technology self-reliance by enabling the localization of key components not only for military radars but also for high-resolution synthetic aperture radar (SAR) systems.
Previously fully dependent on imports, these high-performance military semiconductor components have now been developed with domestic technology, and a foundation has been established for mass production at local facilities. The results are expected to bolster national defense autonomy and provide a strong response to export regulations.
The research was promoted as part of the National Research Council of Science & Technology’s (NST) Creative Allied Project beginning in 2023. Through the integration of ETRI’s semiconductor design technology and Wavice’s manufacturing process expertise, three key types of X-band transmit/receive chips were developed: power amplifier (PA), low-noise amplifier (LNA), and switch (SW) MMICs.
These components are claimed to demonstrate performance on a par with commercial products from leading foundry nations such as the USA and Europe, and are the first results utilizing Korea’s only GaN mass-production fab facilities.
Compared to conventional gallium arsenide (GaAs)-based products, the developed GaN MMICs offer higher output and efficiency, which is expected to dramatically improve the performance of military and satellite communication, especially active electronically scanned array (AESA) radars.
AESA radar technology is capable of electronically steering beams to rapidly detect and track targets. It comprises an antenna with multiple transmit/receive modules. Each module integrates a power amplifier to boost transmission signals, a low-noise amplifier to receive signals cleanly, and a switch to toggle between transmit and receive modes.
SAR systems also adopt similar transmit/receive module architectures. GaN semiconductors, with their high power and efficiency, greatly contribute to miniaturization and performance enhancement of such devices.
The components developed in this research are therefore expected to significantly improve the performance of X-band military, maritime and satellite communication radars in South Korea and aid in achieving technological self-reliance.
Since 2020, ETRI has accumulated foundational research results on GaN technology through its DMC Convergence Research Department. The recent achievement is a follow-up effort conducted in collaboration with Wavice to link it with domestic mass-production capabilities.
“By combining ETRI’s design technology with Wavice’s processing technology, we developed three types of high-performance T/R chips for the first time in Korea,” notes Dr Jong-Won Lim of ETRI‘s RF/Power Components Research Section. “We hope this technology contributes to the localization of radar and satellite components,” he adds.
“With the domestic infrastructure capable of mass-producing GaN semiconductors, we have laid the foundation for the self-reliance of critical defense components,” says Wavice’s chief technology officer Yun-Ho Choi. “This will greatly support the stable development of such systems.”
The research team plans to accelerate the localization of military semiconductor components that have long depended on foreign products. They have completed the transfer of design technology to Wavice and are preparing for full-scale commercialization.
They have localized GaN-based MMICs for AESA radar T/R modules, including power amplifiers, low-noise amplifiers, and switches, and even developed a single-chip MMIC integrating all these functions.
This research result builds on ETRI’s prior work and advances the technological maturity of GaN technology for defense applications using Wavice’s foundry capabilities.
The achievement is part of the NST project ‘Advanced Technology Development and Mass Production for Semiconductor Components in Defense for AESA Radar and SAR Satellites using Domestic Foundry’.
