News: Microelectronics
3 July 2025
Mouser enters distribution agreement with Ampleon
Mouser Electronics Inc (a Berkshire Hathaway company) has announced a global distribution agreement with Ampleon B.V. of Nijmegen, The Netherlands, which manufactures radio frequency power devices based on gallium nitride (GaN) and LDMOS technologies. Ampleon says that its portfolio offers flexibility in scaling design and production for any volume and addresses a wide range of applications, including 5G infrastructure, industrial, scientific & medical (ISM), navigation, broadcast communications, and safety radio.
Ampleon’s ART1K6FH and ART2K0FE LDMOS RF power transistors, available from Mouser, are based on Advanced Rugged Technology (ART). The ART series’ novel silicon LDMOS nodes are engineered for a high drain–source breakdown while maintaining a low output capacitance, enabling rugged transistors with high transconductance in the frequency range from HF through UHF.
The 1600W ART1K6FH power transistors offer a 1–425MHz frequency range, and the unmatched 2000W ART2K0FE power transistors offer a 1–400MHz frequency range. These devices provide coverage for various ISM, broadcast and communications applications, delivering high efficiency and excellent thermal stability/ruggedness with no device degradation. Both devices are offered in SOT539AN, SOT539BN and SOT1248C air-cavity ceramic packages.
The BLF981 and BLF981S LDMOS power transistors are designed for broadcast, industrial, avionics, non-cellular and ISM communications applications. Their ruggedness suits digital and analog transmitter applications in the frequency range from HF to 1400MHz. The BLF981 is housed in an SOT467C package, while the BLF981S comes in an SOT467B package, both supporting robust thermal management and long-term reliability.
The CLP24H4S30P GaN–SiC HEMT is a high-efficiency 30W power transistor designed for continuous wave (CW) applications in the 2400–2500MHz frequency range. Suitable for use in industrial, scientific, medical and consumer cooking systems, the CLP24H4S30P offers what is claimed to be excellent power performance and thermal stability. Housed in a compact 7mm x 7mm DFN surface-mount package, the CLP24H4S30P is suitable for compact, high-power RF amplifier designs.
Mouser to distribute Navitas’ wide-bandgap semiconductors products globally
