News: Microelectronics
11 December 2025
SemiQ launches Gen3 1200V S3 modules for high-power industrial and EV applications
SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has expanded its third-generation QSiC MOSFET product line, including devices with what is claimed to be an industry-leading current density and thermal resistance.
Seven devices have been launched, including high-current S3 half-bridge, B2T1 six-pack and B3 full-bridge packages. The new modules are said to dramatically increase performance, reduce cooling complexity, and cut switching losses for the next wave of EV chargers, energy storage systems, and industrial motor drives.
The expansion addresses the growing demand for ultra-efficient conversion in high-power systems, and features devices engineered for current capabilities of up to 608A and a junction-to-case thermal resistance of just 0.07ºC/W (in the 62mm standard S3 half-bridge format).
The six-pack modules integrate the three-phase power stage into a compact housing and have an RDSon range of 19.5mΩ to 82mΩ. They are designed to optimize layout and minimize parasitics in motor drives and advanced AC–DC converters.
The full-bridge modules deliver high current capabilities of up to 120A and an ultra-low on-resistance down to 8.6mΩ. This combination, coupled with a low thermal resistance of 0.28ºC/W, maximizes power density and efficiency in single-phase inverters and high-voltage DC–DC systems.
All parts are screened using wafer-level gate-oxide burn-in tests to guarantee the gate oxide quality. They are also breakdown voltage tested to over 1350V. Modules using these third-generation chips operate at lower gate voltages than previous generations as a result of the 18V/–4.5V gate voltage of the third-generation chips. SemiQ says that its Gen3 technology reduces both RONsp and turn-off energy losses (EOFF) by up to 30% versus previous generations.
“EV infrastructure and new industrial applications require ever increasing levels of performance,” notes Dr Timothy Han. “With industry-leading current density and significantly lower on-resistance, our new Gen3 full-bridge, half-bridge and six-pack modules are helping organizations meet these requirements.”
SemiQ adds 7.4, 14.5 and 34mΩ SOT-227 modules to 1200V Gen3 SiC MOSFET line
