News: Microelectronics
4 December 2025
ROHM launches 13–65mΩ SiC MOSFETs in TOLL package
Japan-based ROHM has begun mass production of the SCT40xxDLL series of silicon carbide (SiC) MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, the new packages offer about 39% improved thermal performance, enabling high-power handling despite their compact size and low profile. It is suitable for industrial equipment such as server power supplies and ESS (energy storage systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design.
In applications like AI servers and compact photovoltaic (PV) inverters, the trend toward higher power ratings is occurring simultaneously with the contradictory demand for miniaturization, requiring power MOSFETs to achieve higher power density. Particularly in totem-pole power factor correction (PFC) circuits for slim (‘pizza-box type’) power supplies, stringent requirements demand thicknesses of 4mm or less for discrete semiconductors.
ROHM's new product addresses these needs by reducing component footprint by about 26% and achieving a low profile of 2.3mm thickness – roughly half that of conventional packaged products. Furthermore, while most standard TOLL package products are limited by a drain–source rated voltage of 650V, ROHM's new products support up to 750V. This allows for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses.
The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ, with mass production started in September. These products are available for online purchase from online distributors such as DigiKey, Mouser and Farnell. Simulation models for all six new products are available on ROHM's official website, supporting rapid circuit design evaluation.
ROHM’s SiC MOSFETs in mass production in Schaeffler’s inverter brick
