News: Suppliers
4 December 2025
Coherent expands silicon carbide platform from 200mm to 300mm
Materials, networking and laser technology firm Coherent Corp of Saxonburg, PA, USA says that it has leveraged its 200mm silicon carbide platform expertise to develop a next-generation 300mm silicon carbide solution, engineered to manage rising thermal loads, that meets the accelerating performance and scalability needs of modern data centers. As these systems demand higher power density, faster switching, and superior thermal management, the transition to larger-diameter SiC wafers can unlock major gains in energy efficiency and thermal performance, the firm says.
While data-center thermal management applications are the primary focus of the platform, Coherent is also advancing its SiC technology for AR/VR devices and power electronics through continued materials innovation and expanded manufacturing capacity.
“AI is transforming the thermal-management landscape in data centers, and silicon carbide is emerging as one of the foundational materials enabling this scalability,” says senior VP & general manager Gary Ruland. “Our 300mm platform, which we plan to ramp in high volumes, delivers new levels of thermal efficiency that translate directly into faster, more power-efficient AI data centers.”
The platform’s conductive SiC substrates provide low resistivity, low defect density, and high homogeneity, enabling low dissipation, high frequency, and good thermal stability. In AI and data infrastructure, their properties boost energy efficiency and thermal performance in next-generation data-center systems. The same technology enables thinner and more efficient waveguides for AR smart glasses and VR headsets, improving reliability in compact immersive display modules. In power electronics, the transition to 300mm allows more devices per wafer and reduces cost per chip, supporting applications such as electric vehicles, renewable energy systems and industrial automation.
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