News: Microelectronics
26 August 2025
Toshiba and SICC sign MOU on silicon carbide power semi wafer collaboration
Toshiba Electronic Devices & Storage Corp of Kawasaki, Japan and Chinese silicon carbide (SiC) supplier SICC Co Ltd have signed a memorandum of understanding (MOU) to explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two firms will discuss the scope of their joint efforts and mutual support.
Picture: (Left) SICC’s chairman Zong Yanmin and (right) Noriyasu Kurihara, director, vice president of Semiconductor Division, at Toshiba Electronic Devices & Storage Corp.
Toshiba develops, manufactures and sells SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. It aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Collaboration with SICC is expected to drive forward optimal solutions for various applications and accelerate business expansion.
Since its founding in 2010, SICC has focused on the development and production of single-crystal SiC wafers. Following its initial public offering in 2022 (the first in China to focus on SiC), SICC has achieved vertical expansion in global business and market share. In 2024, it introduced the first 12-inch SiC wafer, and in 2025 it announced 12-inch wafers for all products, including n-type, semi-insulating, and p-type.
In the proposed collaboration with Toshiba, SICC aims to link SiC power semiconductor manufacturers’ requirements and expectations for SiC wafer technology to improved wafer quality and reliability, and to contribute to the expansion of the SiC power semiconductor market.
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