News: Microelectronics
28 August 2025
Toshiba launches 650V third-generation SiC MOSFETs in TOLL package
Toshiba Electronic Devices & Storage Corp of Kawasaki, Japan has launched three 650V silicon carbide (SiC) MOSFETs equipped with its latest third-generation SiC MOSFET chips and housed in general-purpose surface-mount TOLL packages.
Shipping in volume now, the new TW027U65C, TW048U65C and TW083U65C devices are suitable for industrial equipment, such as switched-mode power supplies (in servers, data centers, communications equipment etc), uninterruptible power supplies, EV charging stations, and power conditioners for photovoltaic inverters.
Picture: Toshiba’s 650V third-generation SiC MOSFETs in a TOLL package.
The 9.9m x 11.68mm x 2.3mm surface-mount TOLL package reduces device volume by more than 80% compared with through-hole packages such as TO-247 and TO-247-4L(X), and improves equipment power density.
The TOLL package also offers lower parasitic impedance than through-hole packages, which helps to reduce switching losses. As a 4-terminal package, a Kelvin connection can be used as the signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW048U65C, turn-on loss and turn-off loss are about 55% and 25% lower, respectively, than in existing Toshiba products (a 650V third-generation SiC MOSFET with equivalent voltage and on-resistance that uses the TO-247 package without Kelvin connection), which will contribute to lower equipment power loss.
Toshiba says that in future it will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.
Toshiba releases 650V third-generation SiC MOSFETs in DFN8x8 package
